公开(公告)号：USRE29336E

公开(公告)日：1977-08-02

申请号：US751926

申请日：1976-12-17

Applicant: Mahn-Jick Lim

Inventor： Mahn-Jick Lim

IPC: C04B41/53 ,  C04B41/91

CPC classification number: C04B41/5353 ,  C04B41/009 ,  C04B41/91

Abstract: A method of etching a surface of a substrate comprising lithium tantalate (LiTaO.sub.3) and chemically similar materials is disclosed. The method includes contacting the surface with a mixture comprising hydrofluoric acid and sulfuric acid. In addition to its etching action, the mixture is also capable of polishing the thus treated surface.

公开(公告)号：US4002512A

公开(公告)日：1977-01-11

申请号：US568215

申请日：1975-04-14

Applicant: Mahn-Jick Lim

Inventor： Mahn-Jick Lim

IPC: C03B19/14 ,  C03B37/014 ,  C03B37/018 ,  C23C16/40 ,  G02B6/132 ,  H01L21/316 ,  H01L21/18

CPC classification number: H01L21/02126 ,  C03B19/1415 ,  C03B37/01413 ,  C03B37/01807 ,  C23C16/402 ,  G02B6/132 ,  H01L21/02129 ,  H01L21/02142 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/02211 ,  H01L21/02271 ,  H01L21/31608 ,  C03B2201/02 ,  C03B2201/10 ,  C03B2201/30 ,  C03B2201/31 ,  C03B2201/32 ,  C03B2201/34 ,  C03B2201/42 ,  C03B2207/36

Abstract: A method of depositing a layer comprising SiO.sub.2 on a surface of a substrate at a rate which is temperature independent is disclosed. The method includes combining dichlorosilane (SiH.sub.2 Cl.sub.2) with an oxidizing gas, such as O.sub.2, CO.sub.2, N.sub.2 O, H.sub.2 O, to form SiO.sub.2.

Abstract translation: 公开了一种以温度无关的速率在衬底的表面上沉积包含SiO 2的层的方法。 该方法包括将二氯硅烷（SiH 2 Cl 2）与氧化气体如O 2，CO 2，N 2 O，H 2 O组合以形成SiO 2。