公开(公告)号：US20220246670A1

公开(公告)日：2022-08-04

申请号：US17622097

申请日：2020-06-24

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Yijing CHEN ,  Li ZHANG ,  Kenneth Eng Kian LEE ,  Eugene A. FITZGERALD

IPC: H01L27/15 ,  H01L33/58 ,  H01L33/60 ,  H01L33/00

Abstract: An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of providing a complementary metal-oxide-semiconductor, CMOS, backplane comprising a driver circuit for the optoelectronic device; and providing a plurality of optical elements on the CMOS backplane, wherein the plurality of optical elements are based on a material system different from CMOS and are disposed in different device layers; wherein a first bonding dielectric is provided between the CMOS backplane and a first one of the different device layers for monolithic integration; and wherein a second bonding dielectric is provided between respective ones of the different device layers for monolithic integration, the second bonding dielectric being transparent.

公开(公告)号：US20220352423A1

公开(公告)日：2022-11-03

申请号：US17621104

申请日：2020-06-24

Applicant: MASSACHUSETTS INSTITUTE OF TECHNOLOGY

Inventor： Yijing CHEN ,  Li ZHANG ,  Kenneth Eng Kian LEE ,  Eugene A. FITZGERALD

IPC: H01L33/38 ,  H01L33/60 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: An integrated structure for an optoelectronic device and a method of fabricating an integrated structure for an optoelectronic device. The method comprises the steps of forming a plurality of epitaxial layers for optical elements on an epitaxial growth substrate, wherein the epitaxial layers are based on a material system different from complementary metal-oxide-semiconductor, CMOS; providing a handle wafer; performing a first dielectric bonding between the epitaxial growth substrate and the handle wafer such that an order of the epitaxial layers for the optical elements is reversed on the handle wafer compared to on the epitaxial growth substrate; removing the epitaxial growth substrate to expose one of the epitaxial layers on the handle wafer; processing the exposed one of the epitaxial layers for providing a common electrode layer for a first contact of each of the optical elements in the optoelectronic device; providing a CMOS integrated circuit, IC, wafer comprising a driver circuit for the optoelectronic device; and performing a second dielectric bonding between the handle wafer and the IC wafer such that an order of the epitaxial layers for the optical elements is reversed on the IC wafer compared to on the handle wafer.

公开(公告)号：US20240069259A1

公开(公告)日：2024-02-29

申请号：US18272016

申请日：2022-01-13

Applicant: Massachusetts Institute of Technology

Inventor： Saurabh SRIVASTAVA ,  Li ZHANG ,  Kenneth Eng Kian LEE ,  Silvija GRADECAK-GARAJ

IPC: G02B5/20

CPC classification number: G02B5/207 ,  G02B5/201 ,  G02B5/206

Abstract: The present invention describes photoluminescent apparatuses or colour filters (100a,100b,100c,100d) and methods (1000a,1000b) for manufacturing. A photoluminescent (PL) or quantum dot (QD) material (100) fills a pattern of trenches (40,42) formed on a surface or on opposite surfaces of an optically transparent substrate (20), being cured and sealed by an optically transparent cover (22); in another embodiment, the PL or QD material (100) are cured and sealed when two patterned optically substrates (20) are bonded together. Sealing of the PL or QD material in the trenches (40,42) preserves the optical and performance stability of these colour filters. These colour filters (100a, . . . 100d) are suitable for use in next generation UHD display screens or lighting applications.