公开(公告)号：US09379696B2

公开(公告)日：2016-06-28

申请号：US14294176

申请日：2014-06-03

Applicant: Maxchip Electronics Corp.

Inventor： Ming-Chi Kuo ,  Tsung-Chih Tsai ,  Jen-Yao Hsu

IPC: H03K17/16 ,  H03K17/14 ,  H03K17/687 ,  H03K17/06

CPC classification number: H03K17/145 ,  H03K17/063 ,  H03K17/162 ,  H03K17/6871 ,  H03K2017/6875 ,  H03K2217/0054 ,  H03K2217/0081

Abstract: A high voltage bootstrap gate driving apparatus is provided. The gate driving apparatus includes a high-end transistor, a low-end transistor, a buffer, a boost capacitor, and a high voltage depletion transistor. The high-end transistor receives a first power voltage. The buffer provides a high-end driving signal to the high-end transistor according to a bias voltage. The boost capacitor is serial coupled between a base voltage and a bias voltage. A first end of the depletion transistor is coupled to a second power voltage, a second end of the depletion transistor is coupled to the bias voltage, and a control end of the depletion transistor receives the reference ground voltage.

Abstract translation: 提供了一种高压自举门驱动装置。 栅极驱动装置包括高端晶体管，低端晶体管，缓冲器，升压电容器和高电压耗尽晶体管。 高端晶体管接收第一电源电压。 缓冲器根据偏置电压向高端晶体管提供高端驱动信号。 升压电容器串联耦合在基极电压和偏置电压之间。 耗尽晶体管的第一端耦合到第二电源电压，耗尽型晶体管的第二端耦合到偏置电压，耗尽晶体管的控制端接收参考接地电压。

公开(公告)号：US20150311891A1

公开(公告)日：2015-10-29

申请号：US14294176

申请日：2014-06-03

Applicant: Maxchip Electronics Corp.

Inventor： Ming-Chi Kuo ,  Tsung-Chih Tsai ,  Jen-Yao Hsu

IPC: H03K17/14 ,  H03K17/687 ,  H03K17/16

CPC classification number: H03K17/145 ,  H03K17/063 ,  H03K17/162 ,  H03K17/6871 ,  H03K2017/6875 ,  H03K2217/0054 ,  H03K2217/0081

Abstract: A high voltage bootstrap gate driving apparatus is provided. The gate driving apparatus includes a high-end transistor, a low-end transistor, a buffer, a boost capacitor, and a high voltage depletion transistor. The high-end transistor receives a first power voltage. The buffer provides a high-end driving signal to the high-end transistor according to a bias voltage. The boost capacitor is serial coupled between a base voltage and a bias voltage. A first end of the depletion transistor is coupled to a second power voltage, a second end of the depletion transistor is coupled to the bias voltage, and a control end of the depletion transistor receives the reference ground voltage.

Abstract translation: 提供了一种高压自举门驱动装置。 栅极驱动装置包括高端晶体管，低端晶体管，缓冲器，升压电容器和高电压耗尽晶体管。 高端晶体管接收第一电源电压。 缓冲器根据偏置电压向高端晶体管提供高端驱动信号。 升压电容器串联耦合在基极电压和偏置电压之间。 耗尽晶体管的第一端耦合到第二电源电压，耗尽型晶体管的第二端耦合到偏置电压，耗尽晶体管的控制端接收参考接地电压。