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    Wire-based metallization for solar cells
    1.
    发明授权
    Wire-based metallization for solar cells 有权

    公开(公告)号：US12132126B2

    公开(公告)日：2024-10-29

    申请号：US17836822

    申请日：2022-06-09

    Applicant: Maxeon Solar Pte. Ltd.

    Inventor： Richard Hamilton Sewell ,  Robert Woehl ,  Jens Dirk Moschner ,  Nils-Peter Harder

    IPC: H01L31/044 ,  H01L31/0224 ,  H01L31/068

    CPC classification number: H01L31/022441 ,  H01L31/0682 ,  Y02E10/547

    Abstract: Approaches for fabricating wire-based metallization for solar cells, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of metal wires. Each metal wire of the plurality of metal wires is parallel along a first direction to form a one-dimensional layout of a metallization layer for the solar cell.

    WIRE-BASED METALLIZATION AND STRINGING FOR SOLAR CELLS
    6.
    发明公开
    WIRE-BASED METALLIZATION AND STRINGING FOR SOLAR CELLS 审中-公开

    公开(公告)号：US20240047595A1

    公开(公告)日：2024-02-08

    申请号：US18380578

    申请日：2023-10-16

    Applicant: Maxeon Solar Pte. Ltd.

    Inventor： Richard Hamilton Sewell ,  David Aaron Randolph Barkhouse ,  Douglas Rose ,  Lewis Abra

    IPC: H01L31/05

    CPC classification number: H01L31/0508 ,  H01L31/0516

    Abstract: Wire-based metallization and stringing techniques for solar cells, and the resulting solar cells, modules, and equipment, are described. In an example, a substrate has a surface. A plurality of N-type and P-type semiconductor regions is disposed in or above the surface of the substrate. A conductive contact structure is disposed on the plurality of N-type and P-type semiconductor regions. The conductive contact structure includes a plurality of conductive wires, each conductive wire of the plurality of conductive wires essentially continuously bonded directly to a corresponding one of the N-type and P-type semiconductor regions.

    Roll-to-roll metallization of solar cells
    7.
    发明授权
    Roll-to-roll metallization of solar cells 有权

    公开(公告)号：US12159955B2

    公开(公告)日：2024-12-03

    申请号：US17409617

    申请日：2021-08-23

    Applicant: Maxeon Solar Pte. Ltd.

    Inventor： Richard Hamilton Sewell ,  Gabriela Elena Bunea

    IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/05 ,  H01L31/068

    Abstract: Disclosed herein are approaches to fabricating solar cells, solar cell strings and solar modules using roll-to-roll foil-based metallization approaches. Methods disclosed herein can comprise the steps of providing at least one solar cell wafer on a first roll unit and conveying a metal foil to the first roll unit. The metal foil can be coupled to the solar cell wafer on the first roll unit to produce a unified pairing of the metal foil and the solar cell wafer. We disclose solar energy collection devices and manufacturing methods thereof enabling reduction of manufacturing costs due to simplification of the manufacturing process by a high throughput foil metallization process.

    Leave-in etch mask for foil-based metallization of solar cells
    10.
    发明授权
    Leave-in etch mask for foil-based metallization of solar cells 有权

    公开(公告)号：US11894472B2

    公开(公告)日：2024-02-06

    申请号：US17082995

    申请日：2020-10-28

    Applicant: Maxeon Solar Pte. Ltd.

    Inventor： Richard Hamilton Sewell ,  David Fredric Joel Kavulak ,  Taeseok Kim ,  Gabriel Harley

    IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/18

    CPC classification number: H01L31/022441 ,  H01L31/0682 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/50

    Abstract: Approaches for fabricating foil-based metallization of solar cells based on a leave-in etch mask, and the resulting solar cells, are described. In an example, a solar cell includes a substrate having a back surface and an opposing light-receiving surface. A plurality of alternating N-type and P-type semiconductor regions is disposed in or above the back surface of the substrate. A conductive contact structure is disposed on the plurality of alternating N-type and P-type semiconductor regions. The conductive contact structure includes metal foil portions in alignment with corresponding ones of the alternating N-type and P-type semiconductor regions. A patterned wet etchant-resistant polymer layer is disposed on the conductive contact structure. Portions of the patterned wet etchant-resistant polymer layer are disposed on and in alignment with the metal foil portions.

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