Highly Linear Low Noise Transconductor
    1.
    发明申请

    公开(公告)号:US20190341892A1

    公开(公告)日:2019-11-07

    申请号:US16400483

    申请日:2019-05-01

    Abstract: A transconductance circuit comprises a first transistor, a second transistor, a first source-degeneration device, a second source-degeneration device, a first feedback device, and a second feedback device. The gate node of the first transistor is coupled to a source node of the second transistor via the first feedback device. The gate node of the second transistor is coupled to a source node of the second transistor via the second feedback device. The source node of the first transistor is coupled to a reference voltage via the first source-degeneration device. The source node of the second transistor is coupled to the reference voltage via the second source-degeneration device.

    Highly linear low noise transconductor

    公开(公告)号:US10951176B2

    公开(公告)日:2021-03-16

    申请号:US16400483

    申请日:2019-05-01

    Abstract: A transconductance circuit comprises a first transistor, a second transistor, a first source-degeneration device, a second source-degeneration device, a first feedback device, and a second feedback device. The gate node of the first transistor is coupled to a source node of the second transistor via the first feedback device. The gate node of the second transistor is coupled to a source node of the second transistor via the second feedback device. The source node of the first transistor is coupled to a reference voltage via the first source-degeneration device. The source node of the second transistor is coupled to the reference voltage via the second source-degeneration device.

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