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公开(公告)号:US20220230813A1
公开(公告)日:2022-07-21
申请号:US17610492
申请日:2020-06-02
Applicant: Mecaroenergy Co., Ltd.
Inventor: Hyuk Kyoo Jang , So Yeon Lee , Gyu Hyun Lee
Abstract: Disclosed is a method for preparing the light absorption layer of a perovskite solar cell using the chemical vapor deposition (CVD) method. The method for preparing the light absorption layer of a perovskite solar cell using the chemical vapor deposition (CVD) method includes forming a PbIx thin film on a substrate by means of chemical vapor deposition; supplying methylamine and an iodine (I) precursor on the PbIx (1≤x≤2) thin film and forming a CH3NH3PbI3 thin film having a perovskite structure through heat treatment.
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公开(公告)号:US11978817B2
公开(公告)日:2024-05-07
申请号:US17853801
申请日:2022-06-29
Applicant: MECAROENERGY CO., LTD.
Inventor: Hyuk Kyoo Jang , Gyu Hyun Lee
IPC: H01L31/048 , H01L31/0445
CPC classification number: H01L31/0481 , H01L31/0445
Abstract: Provided is a solar power generation module, comprising: a lower substrate 100 into which solar cells 200 are inserted; and an upper substrate 300 disposed on the lower substrate 100, wherein the lower substrate 100 comprises piercing parts 110 configured to pass through the lower substrate 100, or spatial groove parts 115 formed in their respective groove shapes in the lower substrate 100, each of the solar cells 200 is disposed in a space between each of the piercing parts 110 or the spatial grove parts 115 of the lower substrate 100, and the upper substrate 300 is disposed at an upper portion of the lower substrate 100 into which the solar cells 200 are inserted.
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公开(公告)号:US10727366B2
公开(公告)日:2020-07-28
申请号:US16066631
申请日:2016-01-13
Applicant: MECAROENERGY CO., LTD.
Inventor: Hyuk Kyoo Jang , Dong Soo Seok , Gyu Hyun Lee , Ho Gun Lee
IPC: H01L31/072 , H01L31/18 , H01L31/0749 , H01L21/02 , C23C16/56 , C23C16/30 , H01L31/0224 , H01L31/032
Abstract: The resent invention relates to a method for manufacturing a solar cell, the method comprising the steps of: (a) forming a lower electrode layer on a substrate; (b) forming a CIGS light absorbing layer on the lower electrode layer by supplying a copper precursor to deposit a copper thin film using chemical vapor deposition and then supplying a gallium precursor, an indium precursor, and a first selenium precursor to deposit a gallium thin film and an indium-selenium thin film using chemical vapor deposition; and (c) sequentially forming a buffer layer and a front electrode layer on the CIGS light absorbing layer.
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