VIRTUAL INDEXING IN A MEMORY DEVICE

    公开(公告)号:US20250156316A1

    公开(公告)日:2025-05-15

    申请号:US19022410

    申请日:2025-01-15

    Abstract: A method includes writing, to a first data structure, indices corresponding to address locations of a logical-to-physical (L2P) data structure that maps a plurality of logical block addresses (LBAs) associated with the L2P data structure, initiating performance of a media management operation involving one or more memory blocks in which data associated with the LBAs is written, and refraining from rewriting particular entries in the L2P table that correspond to LBAs whose index in the first data structure is a particular value during performance of the media management operation.

    Virtual indexing in a memory device

    公开(公告)号:US12210448B2

    公开(公告)日:2025-01-28

    申请号:US18037631

    申请日:2022-09-01

    Abstract: A method includes writing, to a first data structure, indices corresponding to address locations of a logical-to-physical (L2P) data structure that maps a plurality of logical block addresses (LBAs) associated with the L2P data structure, initiating performance of a media management operation involving one or more memory blocks in which data associated with the LBAs is written, and refraining from rewriting particular entries in the L2P table that correspond to LBAs whose index in the first data structure is a particular value during performance of the media management operation.

    MEMORY MANAGEMENT AMONG MULTIPLE ERASE BLOCKS COUPLED TO A SAME STRING

    公开(公告)号:US20250077415A1

    公开(公告)日:2025-03-06

    申请号:US18771972

    申请日:2024-07-12

    Abstract: An apparatus can comprise a memory array comprising a plurality of erase blocks and a plurality of strings of memory cells. Each string of the plurality of strings can comprise: a first group of memory cells coupled to a first group of access lines and corresponding to a first erase block; and a second group of memory cells coupled to a second group of access lines and corresponding to a second erase block. A controller coupled to the memory array can be configured to: receive a write command corresponding to data to be written to the memory array; determine a temperature classification for the data to which the write command corresponds; and, based on the determined temperature classification for the data, route the data to a first write cursor or to one of a number of different write cursors.

    PROGRAMMING ERASE BLOCKS COUPLED TO A SAME STRING

    公开(公告)号:US20240311057A1

    公开(公告)日:2024-09-19

    申请号:US18606670

    申请日:2024-03-15

    CPC classification number: G06F3/0679 G06F3/0614 G06F3/0659

    Abstract: A method can comprise receiving data corresponding to a sequence of write commands to write the data to a memory array comprising a plurality of strings of memory cells. Each string of the plurality of strings comprises: a first group of memory cells coupled to a first group of access lines and corresponding to a first erase block having a first programming characteristic; and a second group of memory cells coupled to a second group of access lines and corresponding to a second erase block having a second programming characteristic. The method can further comprise writing data sequentially to the first erase blocks of the plurality of strings and the second erase blocks of the plurality of strings in an interleaved manner by: writing a first portion of the data to one or more first erase blocks of the plurality of strings; and writing, subsequent to writing the first portion of the data to the one or more first erase blocks, a second portion of the data to one or more second erase blocks of the plurality of strings.

Patent Agency Ranking