公开(公告)号：US20160043089A1

公开(公告)日：2016-02-11

申请号：US14877212

申请日：2015-10-07

Applicant: Micron Technology, Inc.

Inventor： Zhimin Song ,  Che-Chi Lee ,  Brett Busch

IPC: H01L27/108 ,  H01L21/02 ,  H01L21/311

CPC classification number: H01L27/10852 ,  H01L21/02266 ,  H01L21/31116 ,  H01L21/31144 ,  H01L27/10814 ,  H01L27/10817 ,  H01L28/91

Abstract: Memory cell support lattices and methods of forming the same are described herein. As an example, a method of forming a memory cell support lattice includes forming a mask on a number of capacitor elements in an array, such that a space between vertically and horizontally adjacent capacitor elements is fully covered and a space between diagonally adjacent capacitor elements is partially covered and forming a support lattice in a support material by etching the support material to remove portions of the support material below the openings in the mask.

Abstract translation: 本文描述了记忆单元支撑晶格及其形成方法。 作为示例，形成存储单元支撑晶格的方法包括在阵列中的多个电容器元件上形成掩模，使得垂直和水平相邻的电容器元件之间的空间被完全覆盖，并且对角相邻的电容器元件之间的空间是 部分地覆盖并通过蚀刻支撑材料在支撑材料中形成支撑格架，以将掩模中开口下方的支撑材料的部分去除。