公开(公告)号：US20180096972A1

公开(公告)日：2018-04-05

申请号：US15831857

申请日：2017-12-05

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masakazu Fukumitsu ,  Shuhei Yamada

IPC: H01L25/065 ,  H01L23/00 ,  H01L23/02

CPC classification number: H01L25/0657 ,  H01L21/561 ,  H01L23/02 ,  H01L23/10 ,  H01L24/94 ,  H01L2924/16195 ,  H01L2924/16235

Abstract: A wafer level package that includes a first wafer; a second wafer facing the first wafer; a plurality of chips between the first wafer and the second wafer and arranged in an array; a plurality of sealing frames at predetermined intervals and surrounding each of the plurality of chips to seal the chips; and a coupling portion which couples opposed corners of respective sealing frames.

公开(公告)号：US20170252855A1

公开(公告)日：2017-09-07

申请号：US15599714

申请日：2017-05-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masakazu Fukumitsu ,  Shuhei Yamada

IPC: B23K20/02 ,  H01L41/313 ,  B06B1/06 ,  H01L41/09 ,  B23K20/16 ,  B23K20/22

CPC classification number: B23K20/023 ,  B06B1/06 ,  B06B1/0603 ,  B06B1/0648 ,  B23K20/16 ,  B23K20/22 ,  B23K2101/40 ,  B81B2201/0242 ,  B81C1/00269 ,  B81C2203/033 ,  B81C2203/035 ,  H01L21/187 ,  H01L41/09 ,  H01L41/313 ,  H03H3/02 ,  H03H9/0595 ,  H03H9/1035 ,  H03H2003/026

Abstract: Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.

公开(公告)号：US10934161B2

公开(公告)日：2021-03-02

申请号：US15865691

申请日：2018-01-09

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masakazu Fukumitsu ,  Shuhei Yamada

IPC: H03H9/10 ,  B81C1/00 ,  H01L23/02 ,  B81B7/00 ,  H03H3/007 ,  H03H9/24

Abstract: A MEMS device that includes a lower substrate having an element region on a surface thereof; an upper substrate opposed to the lower substrate; and a bonding section that bonds the lower substrate and the upper substrate to each other around the periphery of the element region. The bonding section has a first region, a second region, and a third region which are sequentially provided in this order from a side closer to the element region to a side farther from the element region. At least one of the first region and the third region contains a hyper-eutectic alloy of one of a first component and a second component, and the second region contains a eutectic alloy of the first component and the second component.

公开(公告)号：US10118247B2

公开(公告)日：2018-11-06

申请号：US15599714

申请日：2017-05-19

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Masakazu Fukumitsu ,  Shuhei Yamada

IPC: H01L41/313 ,  B23K20/02 ,  B06B1/06 ,  H01L41/09 ,  B23K20/16 ,  B23K20/22 ,  B81C1/00 ,  H01L21/18 ,  B23K101/40 ,  H03H3/02 ,  H03H9/05 ,  H03H9/10

Abstract: Provided is a method for bonding wafers, which can bond the wafers to each other with high reliability while reducing the influence on the wafers. The method for bonding wafers includes the steps of: preparing a first wafer that has, on the surface thereof, a first metal layer with a first rigidity modulus, and a second wafer that has, on the surface thereof, a second metal layer with a second rigidity modulus higher than the first rigidity modulus; removing an oxide film at the surface of the second metal layer while an oxide film at the surface of the first metal layer is not removed; and bonding the surface of the first wafer to the surface of the second wafer.

公开(公告)号：US20180127268A1

公开(公告)日：2018-05-10

申请号：US15865691

申请日：2018-01-09

Applicant: Murata Manufacturing Co .. Ltd.

Inventor： Masakazu Fukumitsu ,  Shuhei Yamada

IPC: B81C1/00 ,  H03H3/007 ,  H03H9/24 ,  B81B7/00

CPC classification number: B81C1/00269 ,  B81B7/0077 ,  B81B2201/0271 ,  B81B2207/095 ,  B81C2203/0118 ,  B81C2203/035 ,  B81C2203/036 ,  H01L23/02 ,  H03H3/0072 ,  H03H9/1057 ,  H03H9/2405

Abstract: A MEMS device that includes a lower substrate having an element region on a surface thereof; an upper substrate opposed to the lower substrate; and a bonding section that bonds the lower substrate and the upper substrate to each other around the periphery of the element region. The bonding section has a first region, a second region, and a third region which are sequentially provided in this order from a side closer to the element region to a side farther from the element region. At least one of the first region and the third region contains a hyper-eutectic alloy of one of a first component and a second component, and the second region contains a eutectic alloy of the first component and the second component.