公开(公告)号：US20240116753A1

公开(公告)日：2024-04-11

申请号：US18483980

申请日：2023-10-10

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Antti IIHOLA ,  Jeanette LINDROOS

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81C1/00301 ,  B81B7/007 ,  B81B2207/095 ,  B81C2203/0118

Abstract: A method is provided for sealing and contacting a microelectromechanical device that includes a silicon device wafer with MEMS device structures and a cap wafer with an electrical circuit. The device wafer includes a sealing region and an interconnection region. Moreover, the cap wafer includes a corresponding sealing region and an interconnection region. Layers of eutectic metal alloy material are deposited on the sealing and the interconnection regions of the device wafer and the cap wafer. The cap wafer is bonded to the device wafer so that the interconnection region of the device wafer is aligned with the interconnection region of the cap wafer and the sealing region of the device wafer is aligned with the sealing region of the cap wafer.

公开(公告)号：US20250109015A1

公开(公告)日：2025-04-03

申请号：US18894715

申请日：2024-09-24

Applicant: Murata Manufacturing Co., Ltd.

Inventor： Jeanette LINDROOS ,  Masakazu FUKUMITSU

IPC: B81C1/00 ,  B81B7/00

Abstract: A device includes a cap wafer with a sealing region surrounding a gap-control region, and a structure wafer with a corresponding sealing region and gap-control region. The cap wafer has top and bottom surfaces, defining an xy-plane, and a vertical z-direction perpendicular to this plane. The structure wafer is similarly oriented, with its top surface parallel to the xy-plane. The cap wafer and structure wafer are bonded by a eutectic seal connecting their sealing regions, ensuring alignment of their gap-control regions along the z-axis. The device also includes a metal layer located on the bottom surface of the cap wafer in its gap-control region, and the structure wafer features a standoff protruding from its top surface within its gap-control region, extending along the z-direction to contact the metal layer.