Abstract:
A process for producing conductive pastes for forming solar cell electrodes, including a step of measuring binding energies of oxygen in a glass frit by X-ray photoelectron spectroscopy, a step of selecting a glass frit providing an X-ray photoelectron spectrum representing binding energies of oxygen in which the signal intensity of a peak with a peak top at a range from 529 eV to less than 531 eV has a proportion of 40% or more relative to the total of signal intensities from 526 eV to 536 eV, and a step of mixing together a conductive powder, the glass frit and an organic vehicle.
Abstract:
The present invention aims to provide a high performance crystalline silicon solar cell. The present invention is a crystalline silicon solar cell including a first conductivity-type crystalline silicon substrate; an impurity diffusion layer formed on at least a portion of at least one surface of the crystalline silicon substrate; a buffer layer formed on at least a portion of a surface of the impurity diffusion layer; and an electrode formed on a surface of the buffer layer, wherein the electrode includes a conductive metal and a complex oxide, and the buffer layer is a layer comprising silicon, oxygen, and nitrogen.
Abstract:
The invention relates to a process for manufacturing solar cells. The manufacturing process of the invention comprises the steps of printing a conductive paste onto an n-type silicon layer of a crystalline silicon substrate or onto an antireflection film on the n-type silicon layer, and drying and firing the conductive paste to form an electrode. The conductive paste comprises a conductive powder, a glass frit and an organic vehicle. The glass frit comprises at least one oxide. X-ray photoelectron spectroscopy of the glass fit gives a spectrum representing binding energies of oxygen in which the signal intensity of a peak with a peak top at a range from 529 eV to less than 531 eV has a proportion of 40% or more relative to the total of signal intensities from 526 eV to 536 eV.