CRYSTALLINE SILICON SOLAR CELL AND METHOD FOR PRODUCING SAME
    2.
    发明申请
    CRYSTALLINE SILICON SOLAR CELL AND METHOD FOR PRODUCING SAME 审中-公开
    晶体硅太阳能电池及其制造方法

    公开(公告)号:US20160155868A1

    公开(公告)日:2016-06-02

    申请号:US14906438

    申请日:2014-07-24

    Abstract: The present invention aims to provide a high performance crystalline silicon solar cell. The present invention is a crystalline silicon solar cell including a first conductivity-type crystalline silicon substrate; an impurity diffusion layer formed on at least a portion of at least one surface of the crystalline silicon substrate; a buffer layer formed on at least a portion of a surface of the impurity diffusion layer; and an electrode formed on a surface of the buffer layer, wherein the electrode includes a conductive metal and a complex oxide, and the buffer layer is a layer comprising silicon, oxygen, and nitrogen.

    Abstract translation: 本发明旨在提供一种高性能晶体硅太阳能电池。 本发明是一种包括第一导电型晶体硅衬底的晶体硅太阳能电池; 形成在所述晶体硅衬底的至少一个表面的至少一部分上的杂质扩散层; 形成在所述杂质扩散层的表面的至少一部分上的缓冲层; 以及形成在所述缓冲层的表面上的电极,其中所述电极包括导电金属和复合氧化物,并且所述缓冲层是包含硅,氧和氮的层。

    CONDUCTIVE PASTES FOR FORMING SOLAR CELL ELECTRODES
    3.
    发明申请
    CONDUCTIVE PASTES FOR FORMING SOLAR CELL ELECTRODES 审中-公开
    形成太阳能电池电极的导电胶浆

    公开(公告)号:US20130312825A1

    公开(公告)日:2013-11-28

    申请号:US13898610

    申请日:2013-05-21

    Inventor: Tetsu TAKAHASHI

    Abstract: The invention relates to a process for manufacturing solar cells. The manufacturing process of the invention comprises the steps of printing a conductive paste onto an n-type silicon layer of a crystalline silicon substrate or onto an antireflection film on the n-type silicon layer, and drying and firing the conductive paste to form an electrode. The conductive paste comprises a conductive powder, a glass frit and an organic vehicle. The glass frit comprises at least one oxide. X-ray photoelectron spectroscopy of the glass fit gives a spectrum representing binding energies of oxygen in which the signal intensity of a peak with a peak top at a range from 529 eV to less than 531 eV has a proportion of 40% or more relative to the total of signal intensities from 526 eV to 536 eV.

    Abstract translation: 本发明涉及太阳能电池的制造方法。 本发明的制造方法包括以下步骤:将导电浆料印刷在结晶硅衬底的n型硅层上或n型硅层上的抗反射膜上,干燥和烧制导电膏以形成电极 。 导电浆料包括导电粉末,玻璃料和有机载体。 玻璃料包含至少一种氧化物。 玻璃贴合的X射线光电子能谱表示表示氧的结合能的光谱,其中峰值的峰值在529eV至小于531eV的范围内的峰值的信号强度相对于 信号强度从526 eV到536 eV的总和。

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