公开(公告)号：US09153640B2

公开(公告)日：2015-10-06

申请号：US14320633

申请日：2014-06-30

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Chun-I Hsieh ,  Daniel Damjanovic

IPC: H01L21/20 ,  H01L49/02 ,  H01G4/10 ,  H01L21/02

CPC classification number: H01L28/40 ,  H01G4/10 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02323 ,  H01L21/0234

Abstract: A process of forming a capacitor structure includes providing a substrate. Next, a first electrode is deposited onto the substrate. Later, a water-based ALD process is performed to deposit a transitional amorphous TiO2 layer on the first electrode. Subsequently, the transitional amorphous TiO2 layer is treated by oxygen plasma to transform the entire transitional amorphous TiO2 layer into a rutile TiO2 layer. Finally, a second electrode is deposited on the rutile TiO2 layer.

Abstract translation: 形成电容器结构的工艺包括提供衬底。 接下来，将第一电极沉积到基板上。 然后，进行水性ALD工艺以在第一电极上沉积过渡的无定形TiO 2层。 随后，通过氧等离子体处理过渡非晶态TiO 2层，将整个非晶态TiO 2层转化为金红石型TiO 2层。 最后，第二电极沉积在金红石TiO 2层上。

公开(公告)号：US20140315368A1

公开(公告)日：2014-10-23

申请号：US14320633

申请日：2014-06-30

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Chun-I Hsieh ,  Daniel Damjanovic

IPC: H01L49/02 ,  H01L21/02

CPC classification number: H01L28/40 ,  H01G4/10 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02323 ,  H01L21/0234

Abstract: A process of forming a capacitor structure includes providing a substrate. Next, a first electrode is deposited onto the substrate. Later, a water-based ALD process is performed to deposit a transitional amorphous TiO2 layer on the first electrode. Subsequently, the transitional amorphous TiO2 layer is treated by oxygen plasma to transform the entire transitional amorphous TiO2 layer into a rutile TiO2 layer. Finally, a second electrode is deposited on the rutile TiO2 layer.

Abstract translation: 形成电容器结构的工艺包括提供衬底。 接下来，将第一电极沉积到基板上。 然后，进行水性ALD工艺以在第一电极上沉积过渡的无定形TiO 2层。 随后，通过氧等离子体处理过渡非晶态TiO 2层，将整个非晶态TiO 2层转化为金红石型TiO 2层。 最后，第二电极沉积在金红石TiO 2层上。

公开(公告)号：US20140185182A1

公开(公告)日：2014-07-03

申请号：US13732442

申请日：2013-01-02

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Chun-I Hsieh ,  Daniel Damjanovic

IPC: H01G4/10

CPC classification number: H01L28/40 ,  H01G4/10 ,  H01L21/02186 ,  H01L21/02271 ,  H01L21/02323 ,  H01L21/0234

Abstract: A capacitor structure includes a first electrode on a substrate; a TiO2 dielectric layer directly on the first electrode, wherein the TiO2 dielectric layer has substantially only rutile phase; and a second electrode on the TiO2 dielectric layer. Template layer, seed layer or pretreated layer is not required between the first electrode and the TiO2 dielectric layer. Besides, impurity doping is not required for the TiO2 dielectric layer.

Abstract translation: 电容器结构包括在基板上的第一电极; 直接在第一电极上的TiO 2介电层，其中TiO 2介电层基本上仅具有金红石相; 和TiO 2介电层上的第二电极。 在第一电极和TiO 2介电层之间不需要模板层，晶种层或预处理层。 此外，TiO2介电层不需要杂质掺杂。