公开(公告)号：US09536785B2

公开(公告)日：2017-01-03

申请号：US14963252

申请日：2015-12-09

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Po-Chun Lin

IPC: H01L21/48 ,  H01L21/768 ,  H01L25/04 ,  H01L23/48 ,  H01L25/065 ,  H01L25/11 ,  H01L25/075 ,  H01L25/07

CPC classification number: H01L21/76898 ,  H01L21/486 ,  H01L23/481 ,  H01L25/043 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/0756 ,  H01L25/117 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing through silicon via stacked structures. A plurality of substrates is provided. At least one tapered hole is formed on one surface of each substrate. Each tapered hole is filled up with a tapered through silicon via. A recessed portion is formed on the wider end of each tapered through silicon via. A part of the substrate is removed until the narrower end of each tapered through silicon via protrudes from the other surface of the substrate. The substrates is stacked one after another by fitting and jointing the narrower end of each tapered through silicon via on one substrate into a corresponding recessed portion of the tapered through silicon via of another substrate.

Abstract translation: 一种通过堆叠结构制造硅的方法。 提供多个基板。 在每个基板的一个表面上形成至少一个锥形孔。 每个锥形孔填充有锥形的硅通孔。 在每个锥形硅通孔的较宽端部上形成有凹部。 去除衬底的一部分，直到每个锥形硅通孔的较窄端从衬底的另一表面突出。 通过将一个基板上的每个锥形通孔的较窄端部通过另一个基板接合并连接到锥形通过硅通孔的相应凹部中，将基板彼此堆叠。

公开(公告)号：US20150041182A1

公开(公告)日：2015-02-12

申请号：US14523955

申请日：2014-10-27

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Po-Chun Lin ,  Han-Ning Pei

IPC: H05K1/02

CPC classification number: H05K1/02 ,  H01L23/13 ,  H01L23/3157 ,  H01L23/49816 ,  H01L24/48 ,  H01L2224/16225 ,  H01L2224/16245 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/4824 ,  H01L2224/4826 ,  H01L2224/73207 ,  H01L2224/73215 ,  H01L2224/8592 ,  H01L2224/85951 ,  H01L2924/00014 ,  H01L2924/15311 ,  H01L2924/181 ,  Y10T428/24612 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

Abstract: A package substrate is disclosed. The package substrate includes a base layer and a dam structure or a dent structure on at least one side of the base layer. The base layer may be a CCL core, a molding compound, or an epoxy base.

Abstract translation: 公开了封装衬底。 封装衬底在基层的至少一侧上包括基层和坝结构或凹陷结构。 基层可以是CCL芯，模塑料或环氧基。

公开(公告)号：US20160093532A1

公开(公告)日：2016-03-31

申请号：US14963252

申请日：2015-12-09

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Po-Chun Lin

IPC: H01L21/768 ,  H01L25/065

CPC classification number: H01L21/76898 ,  H01L21/486 ,  H01L23/481 ,  H01L25/043 ,  H01L25/0657 ,  H01L25/074 ,  H01L25/0756 ,  H01L25/117 ,  H01L2225/06513 ,  H01L2225/06544 ,  H01L2225/06565 ,  H01L2225/06593 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing through silicon via stacked structures. A plurality of substrates is provided. At least one tapered hole is formed on one surface of each substrate. Each tapered hole is filled up with a tapered through silicon via. A recessed portion is formed on the wider end of each tapered through silicon via. A part of the substrate is removed until the narrower end of each tapered through silicon via protrudes from the other surface of the substrate. The substrates is stacked one after another by fitting and jointing the narrower end of each tapered through silicon via on one substrate into a corresponding recessed portion of the tapered through silicon via of another substrate.

Abstract translation: 一种通过堆叠结构制造硅的方法。 提供多个基板。 在每个基板的一个表面上形成至少一个锥形孔。 每个锥形孔填充有锥形的硅通孔。 在每个锥形硅通孔的较宽端部上形成有凹部。 去除衬底的一部分，直到每个锥形硅通孔的较窄端从衬底的另一表面突出。 通过将一个基板上的每个锥形通孔的较窄端部通过另一个基板接合并连接到锥形通过硅通孔的相应凹部中，将基板彼此堆叠。