公开(公告)号：US09691773B2

公开(公告)日：2017-06-27

申请号：US14069396

申请日：2013-11-01

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Shyam Surthi ,  Lars Heineck

IPC: H01L29/78 ,  H01L27/108 ,  H01L23/522

CPC classification number: H01L27/10891 ,  H01L23/5222 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An access device includes a plurality of first digit lines (DL) trenches extending along a first direction, buried digit lines between each DL trench, second and third trenches separating the digit lines, a filling material filling the digit line trenches comprising airgaps in each second trench, a plurality of word line (WL) trenches extending along a second direction, metal word lines deposited on the walls of the word line trenches, a filling material filling the word line trenches.

公开(公告)号：US20150123280A1

公开(公告)日：2015-05-07

申请号：US14069396

申请日：2013-11-01

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Shyam Surthi ,  Lars Heineck

IPC: H01L27/108 ,  H01L23/535

CPC classification number: H01L27/10891 ,  H01L23/5222 ,  H01L27/10885 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An access device includes a plurality of first digit lines (DL) trenches extending along a first direction, buried digit lines between each DL trench, second and third trenches separating the digit lines, a filling material filling the digit line trenches comprising airgaps in each second trench, a plurality of word line (WL) trenches extending along a second direction, metal word lines deposited on the walls of the word line trenches, a filling material filling the word line trenches.

Abstract translation: 访问装置包括沿着第一方向延伸的多个第一数字线（DL）沟槽，每个DL沟槽之间的掩埋数字线，分隔数字线的第二和第三沟槽，填充数字线沟槽的填充材料，其包括在每一秒的气隙 沟槽，沿着第二方向延伸的多个字线（WL）沟槽，沉积在字线沟槽的壁上的金属字线，填充字线沟槽的填充材料。

公开(公告)号：US20140346652A1

公开(公告)日：2014-11-27

申请号：US13901592

申请日：2013-05-24

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Shyam Surthi ,  Lars Heineck

IPC: H01L23/552

CPC classification number: H01L27/10894 ,  H01L23/5225 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory array includes a plurality of digitline (DL) trenches extending along a first direction; a buried digitline between the DL trenches; a trench fill material layer sealing an air gap in each of the DL trenches; a plurality of wordline (WL) trenches extending along a second direction; an active chop (AC) trench disposed at one end of the buried digitline; a shield layer in the air gap; and a sidewall conductor around the sidewall of the AC trench.

Abstract translation: 存储器阵列包括沿着第一方向延伸的多个数字线（DL）沟槽; DL沟槽之间的埋置数字线; 密封每个DL沟槽中的气隙的沟槽填充材料层; 沿着第二方向延伸的多个字线（WL）沟槽; 设置在埋地数字线的一端的有源斩波（AC）沟槽; 气隙中的屏蔽层; 以及围绕AC沟槽的侧壁的侧壁导体。

公开(公告)号：US09070584B2

公开(公告)日：2015-06-30

申请号：US13901592

申请日：2013-05-24

Applicant: NANYA TECHNOLOGY CORP.

Inventor： Shyam Surthi ,  Lars Heineck

IPC: H01L27/108 ,  H01L23/522

CPC classification number: H01L27/10894 ,  H01L23/5225 ,  H01L27/10885 ,  H01L27/10891 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A memory array includes a plurality of digitline (DL) trenches extending along a first direction; a buried digitline between the DL trenches; a trench fill material layer sealing an air gap in each of the DL trenches; a plurality of wordline (WL) trenches extending along a second direction; an active chop (AC) trench disposed at one end of the buried digitline; a shield layer in the air gap; and a sidewall conductor around the sidewall of the AC trench.

Abstract translation: 存储器阵列包括沿着第一方向延伸的多个数字线（DL）沟槽; DL沟槽之间的埋置数字线; 密封每个DL沟槽中的气隙的沟槽填充材料层; 沿着第二方向延伸的多个字线（WL）沟槽; 设置在埋地数字线一端的有源斩波（AC）沟槽; 气隙中的屏蔽层; 以及围绕AC沟槽的侧壁的侧壁导体。