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    Semiconductor transducer device
    1.
    发明授权
    Semiconductor transducer device 失效
    半导体传感器器件

    公开(公告)号：US3686542A

    公开(公告)日：1972-08-22

    申请号：US3686542D

    申请日：1970-11-23

    Applicant: NASA

    Inventor： RINDNER WILHELM ,  IANNINI AMERICO ,  GARFEIN ANDRE

    IPC: H01L29/84 ,  H01L11/00 ,  H01L15/00

    CPC classification number: H01L29/84

    Abstract: According to the invention, there is disclosed a miniature electromechanical junction transducer, the operation of which is based on piezojunction effect. The mechanical imput coupling member, in the subject invention, as distinguished from the prior art, is formed in situ and is spread over the top of the mesa structure to form an exact duplicate of the mesa surface at the area of contact.

    Abstract translation: 根据本发明，公开了一种微型机电结转换器，其操作基于压电效应。 在本发明中，与现有技术不同的机械输入接头构件在现场形成并且分布在台面结构的顶部上以在接触区域形成台面的精确重复。

    Electricity measurement devices employing liquid crystalline materials
    2.
    发明授权
    Electricity measurement devices employing liquid crystalline materials 失效
    使用液体结晶材料的电力测量装置

    公开(公告)号：US3667039A

    公开(公告)日：1972-05-30

    申请号：US3667039D

    申请日：1970-06-17

    Applicant: NASA

    Inventor： GARFEIN ANDRE ,  RINDNER WILHELM ,  RUBIN DAVID C

    IPC: G01R13/40 ,  G02F1/133 ,  G01R27/22 ,  G08B23/00

    CPC classification number: G02F1/132 ,  G01R13/40

    Abstract: Disclosed are measuring instruments utilizing liquid crystalline elements that exhibit visible change in response to input signals above given threshold levels. By applying the input signals nonuniformly so that the threshold value is exceeded in only certain portions of the liquid crystalline element, visible discontinuities are created therein. The locations of these discontinuities are made dependent on the magnitudes of the input signals, direct readouts of which are provided by suitably calibrated indicia.

    Abstract translation: 公开了利用液晶元件的测量仪器，其响应于高于给定阈值水平的输入信号显示出可见的变化。 通过不均匀地施加输入信号，使得仅在液晶元件的某些部分中超过阈值，在其中形成可见的不连续性。 这些不连续性的位置取决于输入信号的幅度，其直接读出由适当校准的标记提供。

    Gunn-type solid-state devices
    3.
    发明授权
    Gunn-type solid-state devices 失效
    GUNN型固态装置

    公开(公告)号：US3667010A

    公开(公告)日：1972-05-30

    申请号：US3667010D

    申请日：1967-07-06

    Applicant: NASA

    Inventor： RINDNER WILHELM ,  ROTH HAROLD

    IPC: H01L47/02 ,  H01L11/00

    CPC classification number: H01L47/02

    Abstract: This invention is a multi-terminal Gunn-type semiconductor microwave generator capable of producing signals of stable frequency over a frequency range. In one form, a group III-V semiconductor chip having a varying cross-sectional area is mounted between a pair of contacts. The inner portion of the chip is appropriately doped to create a region of one type of conductivity and an outer shell portion of the chip is appropriately doped to create a region of opposite or different conductivity with a junction formed therebetween. A potential is applied across the pair of contacts to create an electric field gradient along the current axis of the device. A bias is applied through a third contact to the junction, which for the sake of discussion will be referred to as a P/N junction. The biased P/N junction creates a space-charge region that controls the length of the active region, whence the third terminal controls the frequency of the signal generated by the overall device. Numerous alternative embodiments of the invention are possible within the general concept of creating a biased junction that controls the length of the electric field gradient between the first and second contacts.

    Abstract translation: 本发明是能够在频率范围内产生稳定频率的信号的多端子耿氏半导体微波发生器。 在一种形式中，具有变化的横截面面积的III-V族III族半导体芯片安装在一对触点之间。 芯片的内部部分被适当地掺杂以形成一种导电类型的区域，并且芯片的外壳部分被适当地掺杂以产生与其间形成的结的相反或不同导电性的区域。 一对触点上施加一个电位，以产生沿器件当前轴的电场梯度。 通过第三个触点向接头施加偏压，为了讨论起见将被称为P / N结。 偏置的P / N结产生空间电荷区域，其控制有源区域的长度，第三端子控制由整个装置产生的信号的频率。 本发明的许多备选实施例在产生偏置结的一般概念内是可能的，该偏置结控制第一和第二接触之间的电场梯度的长度。

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