公开(公告)号：US20180233659A1

公开(公告)日：2018-08-16

申请号：US15897121

申请日：2018-02-14

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Rie MATSUMOTO ,  Hiroko ARAI ,  Shinji YUASA ,  Hiroshi IMAMURA

IPC: H01L43/08 ,  H01L43/10 ,  H01L27/22 ,  G01R33/09

CPC classification number: H01L43/08 ,  G01R33/093 ,  H01L27/222 ,  H01L43/10

Abstract: Some embodiments are directed to a magnetoresistive device, including a free layer having an easy magnetization direction in a perpendicular direction or in an in-plane direction; a fixed layer having the easy magnetization direction which is in the perpendicular direction when the easy magnetization direction of the free layer is in the perpendicular direction or in the in-plane direction when the easy magnetization direction of the free layer is in the in-plane direction; and a non-magnetic layer disposed between the free layer and the fixed layer.

公开(公告)号：US20180151214A1

公开(公告)日：2018-05-31

申请号：US15576271

申请日：2016-05-19

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Rie MATSUMOTO ,  Hiroko ARAI ,  Shinji YUASA ,  Hiroshi IMAMURA

IPC: G11C11/16 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10 ,  H01F10/32

CPC classification number: G11C11/1675 ,  G11C11/161 ,  H01F10/3236 ,  H01F10/325 ,  H01F10/3254 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10

Abstract: A non-collinear magnetoresistive device, includes: a free layer; a fixed layer; and a non-magnetic layer disposed between the free layer and the fixed layer, wherein the fixed layer has an easy magnetization direction in an in-plane direction or in a perpendicular direction, the free layer satisfies at room temperature expressions (1) and (2) below: ERT≥1.66×10−19 J  (1) V≤5×104 nm3  (2) where ERT=(Ku1,eff+Ku2+Ku1,eff2/4Ku2)×V, Ku1,eff: an effective first-order anisotropy constant, Ku2: a second-order anisotropy constant, and V: a volume, and wherein the free layer is in a cone magnetization state.

公开(公告)号：US20240395283A1

公开(公告)日：2024-11-28

申请号：US18696602

申请日：2022-10-11

Applicant: NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY

Inventor： Rie MATSUMOTO ,  Shinji YUASA ,  Hiroshi IMAMURA

IPC: G11B5/39 ,  G11C11/16 ,  H01F10/32 ,  H10B61/00 ,  H10N50/10 ,  H10N50/85

Abstract: Provided is a magnetic storage device 10 comprising: a magnetoresistive element 11 having a structure in which a recording layer 13 that includes a first magnetic layer, a tunnel barrier layer 14, and a reference layer 15 that includes a second magnetic layer are laminated; and a control unit 12, wherein the in-plane shape of the recording layer 13 is such that a rectangle circumscribing the in-plane shape and having the smallest area has a short side and a long side which have mutually different lengths, and at the time of writing to the recording layer 13, the control unit 12 applies a voltage pulse to the magnetoresistive element 11 while applying an effective magnetic field in the direction of the short side in the plane of the recording layer 13.

公开(公告)号：US20200052193A1

公开(公告)日：2020-02-13

申请号：US16606927

申请日：2018-04-05

Applicant: National Institute of Advanced Industrial Science and Technology

Inventor： Rie MATSUMOTO ,  Takayuki NOZAKI ,  Shinji YUASA ,  Hiroshi IMAMURA

IPC: H01L43/02 ,  G11C11/16 ,  H01L27/22

Abstract: According to an embodiment of the invention, a magnetic element includes a first magnetic layer and a first nonmagnetic layer. An angle θ0 between a first direction and the magnetization direction of the first magnetic layer satisfies 0°