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公开(公告)号：US20200020851A1
公开(公告)日：2020-01-16
申请号：US16443875
申请日：2019-06-18
Applicant: Japan Science and Technology Agency , National Institute of Advanced Industrial Science and Technology
Inventor： Shinji YUASA
IPC: H01L43/10 , H01L27/22 , G11C11/16 , H01L43/02 , H01F10/32 , H01L43/12 , H01L43/08 , B82Y25/00 , H01L27/11507 , H01L49/02 , G11C11/15 , H01F10/13
Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
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公开(公告)号：US20160020385A1
公开(公告)日：2016-01-21
申请号：US14837558
申请日：2015-08-27
Applicant: Japan Science and Technology Agency , National Institute of Advanced Industrial Science and Technology
Inventor： Shinji YUASA
CPC classification number: H01L43/10 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/132 , H01F10/3254 , H01L27/11507 , H01L27/22 , H01L27/222 , H01L27/228 , H01L28/55 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
Abstract translation: 通过以下制备的样品的微细加工形成的Fe（001）/ MgO（001）/ Fe（001）MTJ器件，MRAM的输出电压增加：单晶MgO（001）衬底 准备好了 外延Fe（001）下电极（第一电极）在室温下在MgO（001）晶种层上生长，然后在超高真空下进行退火。 使用MgO电子束蒸发，在室温下在Fe（001）下电极（第一电极）上外延形成MgO（001）势垒层。 然后在室温下在MgO（001）阻挡层上形成Fe（001）上电极（第二电极）。 随后在Fe（001）上电极（第二电极）上沉积Co层。 提供Co层以增加上电极的矫顽力，以实现反平行的磁化对准。
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公开(公告)号：US20200035283A1
公开(公告)日：2020-01-30
申请号：US16603343
申请日：2018-04-04
Inventor： Yoichi SHIOTA , Takayuki NOZAKI , Shinji YUASA
Abstract: According to one embodiment, a magnetic memory device includes a stacked body and a controller. The stacked body includes a first conductive layer, a second conductive layer, a first magnetic layer provided between the first conductive layer and the second conductive layer, a second magnetic layer provided between the first magnetic layer and the second conductive layer, and a nonmagnetic layer provided between the first magnetic layer and the second magnetic layer. A resistance value per unit area of the nonmagnetic layer exceeds 20 Ωμm2. The controller is electrically connected to the first conductive layer and the second conductive layer, and supplies a write pulse to the stacked body in a first operation. The write pulse includes a rise period, a potential of the write pulse changing from a first potential toward a second potential in the rise period, an intermediate period of the second potential after the rise period, and a fall period after the intermediate period, the potential of the write pulse changing from the second potential toward the first potential in the fall period. A duration of the fall period is longer than a duration of the rise period.
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公开(公告)号：US20170155042A1
公开(公告)日：2017-06-01
申请号：US15428842
申请日：2017-02-09
Applicant: Japan Science and Technology Agency , National Institute of Advanced Industrial Science and Technology
Inventor： Shinji YUASA
CPC classification number: H01L43/10 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/132 , H01F10/3254 , H01L27/11507 , H01L27/22 , H01L27/222 , H01L27/228 , H01L28/55 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
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公开(公告)号：US20180233659A1
公开(公告)日：2018-08-16
申请号：US15897121
申请日：2018-02-14
Inventor： Rie MATSUMOTO , Hiroko ARAI , Shinji YUASA , Hiroshi IMAMURA
CPC classification number: H01L43/08 , G01R33/093 , H01L27/222 , H01L43/10
Abstract: Some embodiments are directed to a magnetoresistive device, including a free layer having an easy magnetization direction in a perpendicular direction or in an in-plane direction; a fixed layer having the easy magnetization direction which is in the perpendicular direction when the easy magnetization direction of the free layer is in the perpendicular direction or in the in-plane direction when the easy magnetization direction of the free layer is in the in-plane direction; and a non-magnetic layer disposed between the free layer and the fixed layer.
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Patent Agency Ranking
公开(公告)号：US20180151214A1
公开(公告)日：2018-05-31
申请号：US15576271
申请日：2016-05-19
Inventor： Rie MATSUMOTO , Hiroko ARAI , Shinji YUASA , Hiroshi IMAMURA
CPC classification number: G11C11/1675 , G11C11/161 , H01F10/3236 , H01F10/325 , H01F10/3254 , H01F10/3286 , H01F10/329 , H01L43/02 , H01L43/08 , H01L43/10
Abstract: A non-collinear magnetoresistive device, includes: a free layer; a fixed layer; and a non-magnetic layer disposed between the free layer and the fixed layer, wherein the fixed layer has an easy magnetization direction in an in-plane direction or in a perpendicular direction, the free layer satisfies at room temperature expressions (1) and (2) below: ERT≥1.66×10−19 J (1) V≤5×104 nm3 (2) where ERT=(Ku1,eff+Ku2+Ku1,eff2/4Ku2)×V, Ku1,eff: an effective first-order anisotropy constant, Ku2: a second-order anisotropy constant, and V: a volume, and wherein the free layer is in a cone magnetization state.
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公开(公告)号：US20130228883A1
公开(公告)日：2013-09-05
申请号：US13767290
申请日：2013-02-14
Applicant: JAPAN SCIENCE AND TECHNOLOGY AGENCY , NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
Inventor： Shinji YUASA
IPC: H01L43/10
CPC classification number: H01L43/10 , B82Y10/00 , B82Y25/00 , G11C11/15 , G11C11/16 , G11C11/161 , H01F10/132 , H01F10/3254 , H01L27/11507 , H01L27/22 , H01L27/222 , H01L27/228 , H01L28/55 , H01L43/02 , H01L43/08 , H01L43/12
Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
Abstract translation: 通过以下制备的样品的微细加工形成的Fe（001）/ MgO（001）/ Fe（001）MTJ器件，MRAM的输出电压增加：单晶MgO（001）衬底 准备好了 外延Fe（001）下电极（第一电极）在室温下在MgO（001）晶种层上生长，然后在超高真空下进行退火。 使用MgO电子束蒸发，在室温下在Fe（001）下电极（第一电极）上外延形成MgO（001）势垒层。 然后在室温下在MgO（001）阻挡层上形成Fe（001）上电极（第二电极）。 随后在Fe（001）上电极（第二电极）上沉积Co层。 提供Co层以增加上电极的矫顽力，以实现反平行的磁化对准。
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公开(公告)号：US20240395283A1
公开(公告)日：2024-11-28
申请号：US18696602
申请日：2022-10-11
Inventor： Rie MATSUMOTO , Shinji YUASA , Hiroshi IMAMURA
Abstract: Provided is a magnetic storage device 10 comprising: a magnetoresistive element 11 having a structure in which a recording layer 13 that includes a first magnetic layer, a tunnel barrier layer 14, and a reference layer 15 that includes a second magnetic layer are laminated; and a control unit 12, wherein the in-plane shape of the recording layer 13 is such that a rectangle circumscribing the in-plane shape and having the smallest area has a short side and a long side which have mutually different lengths, and at the time of writing to the recording layer 13, the control unit 12 applies a voltage pulse to the magnetoresistive element 11 while applying an effective magnetic field in the direction of the short side in the plane of the recording layer 13.
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公开(公告)号：US20220115588A1
公开(公告)日：2022-04-14
申请号：US17560922
申请日：2021-12-23
Applicant: Japan Science and Technology Agency , National Institute of Advanced Industrial Science and Technology
Inventor： Shinji YUASA
IPC: H01L43/10 , H01L43/08 , H01L43/12 , G11C11/15 , H01L27/11507 , H01L49/02 , H01L27/22 , G11C11/16 , H01L43/02 , B82Y25/00 , H01F10/13 , H01F10/32 , B82Y10/00
Abstract: The output voltage of an MRAM is increased by means of an Fe(001)/MgO(001)/Fe(001) MTJ device, which is formed by microfabrication of a sample prepared as follows: A single-crystalline MgO (001) substrate is prepared. An epitaxial Fe(001) lower electrode (a first electrode) is grown on a MgO(001) seed layer at room temperature, followed by annealing under ultrahigh vacuum. A MgO(001) barrier layer is epitaxially formed on the Fe(001) lower electrode (the first electrode) at room temperature, using a MgO electron-beam evaporation. A Fe(001) upper electrode (a second electrode) is then formed on the MgO(001) barrier layer at room temperature. This is successively followed by the deposition of a Co layer on the Fe(001) upper electrode (the second electrode). The Co layer is provided so as to increase the coercive force of the upper electrode in order to realize an antiparallel magnetization alignment.
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公开(公告)号：US20210036217A1
公开(公告)日：2021-02-04
申请号：US16498936
申请日：2018-02-15
Applicant: National Institute of Advanced Industrial Science and Technology , TOHOKU UNIVERSITY , NATIONAL INSTITUTE FOR MATERIALS SCIENCE
Inventor： Takayuki NOZAKI , Shinji YUASA , Rachwal Anna KOZIOL , Masahito TSUJIKAWA , Masafumi SHIRAI , Kazuhiro HONO , Tadakatsu OHKUBO , Xiandong XU
Abstract: According to one embodiment, a magnetic element includes a first layer and a second layer. The first layer includes a first element and a second element. The first element includes at least one selected from the group consisting of Fe, Co, and Ni. The second element includes at least one selected from the group consisting of Ir and Os. The second layer is nonmagnetic.
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