MEMORY CELL INCLUDING ELECTRET AND RANDOM ACCESS MEMORY THEREOF

    公开(公告)号:US20170092652A1

    公开(公告)日:2017-03-30

    申请号:US14866855

    申请日:2015-09-26

    Inventor: Kim P. Cheung

    Abstract: A memory cell includes: a polarizable member including an electret to store a plurality of bits; a thermal electrode to heat the polarizable member; and a program electrode opposing the thermal electrode to program the polarizable member in a bit comprising a polarized state or a non-polarized state, the polarizable member being interposed between the thermal electrode and the program electrode. A random access memory includes: a plurality of addressable memory cells, the memory cell including: a thermal electrode; a program electrode opposing the thermal electrode; a polarizable member interposed between the thermal electrode and the program electrode, the polarizable member including an electret to store a plurality of bits.

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