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公开(公告)号:US09627406B1
公开(公告)日:2017-04-18
申请号:US14866855
申请日:2015-09-26
Inventor: Kim P. Cheung
IPC: H01L27/115 , H01L27/1159 , H01L27/11585
CPC classification number: H01L27/1159 , G11C11/2275 , H01G7/021 , H01G7/04 , H01L27/11509 , H01L27/11585 , H01L28/40
Abstract: A memory cell includes: a polarizable member including an electret to store a plurality of bits; a thermal electrode to heat the polarizable member; and a program electrode opposing the thermal electrode to program the polarizable member in a bit comprising a polarized state or a non-polarized state, the polarizable member being interposed between the thermal electrode and the program electrode. A random access memory includes: a plurality of addressable memory cells, the memory cell including: a thermal electrode; a program electrode opposing the thermal electrode; a polarizable member interposed between the thermal electrode and the program electrode, the polarizable member including an electret to store a plurality of bits.
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公开(公告)号:US20170092652A1
公开(公告)日:2017-03-30
申请号:US14866855
申请日:2015-09-26
Inventor: Kim P. Cheung
IPC: H01L27/115
CPC classification number: H01L27/1159 , G11C11/2275 , H01G7/021 , H01G7/04 , H01L27/11509 , H01L27/11585 , H01L28/40
Abstract: A memory cell includes: a polarizable member including an electret to store a plurality of bits; a thermal electrode to heat the polarizable member; and a program electrode opposing the thermal electrode to program the polarizable member in a bit comprising a polarized state or a non-polarized state, the polarizable member being interposed between the thermal electrode and the program electrode. A random access memory includes: a plurality of addressable memory cells, the memory cell including: a thermal electrode; a program electrode opposing the thermal electrode; a polarizable member interposed between the thermal electrode and the program electrode, the polarizable member including an electret to store a plurality of bits.
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