公开(公告)号：US20150147885A1

公开(公告)日：2015-05-28

申请号：US14596349

申请日：2015-01-14

Applicant: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： OWEN HILDRETH

IPC: H01L21/306

CPC classification number: C23C18/1608 ,  C23C18/1879 ,  C23C18/31 ,  C25F3/12 ,  H01L21/28506 ,  H01L21/306 ,  H01L21/30604 ,  H01Q17/00

Abstract: A process for etching includes disposing an activating catalyst on a substrate; providing a vapor composition that includes an etchant oxidizer, an activatable etchant, or a combination thereof; contacting the activating catalyst with the etchant oxidizer; contacting the substrate with the activatable etchant; performing an oxidation-reduction reaction between the substrate, the activatable etchant, and the etchant oxidizer in a presence of the activating catalyst and the vapor composition; forming an etchant product that includes a plurality of atoms from the substrate; and removing the etchant product from the substrate to etch the substrate.

Abstract translation: 蚀刻方法包括在基板上设置活化催化剂; 提供包括蚀刻剂氧化剂，可活化蚀刻剂或其组合的蒸气组合物; 使活化催化剂与蚀刻剂氧化剂接触; 使基底与可活化蚀刻剂接触; 在活化催化剂和蒸汽组合物的存在下，在基材，可活化蚀刻剂和蚀刻剂氧化剂之间进行氧化还原反应; 形成从所述基材包含多个原子的蚀刻剂产物; 以及从衬底去除蚀刻剂产物以蚀刻衬底。

公开(公告)号：US20170098548A9

公开(公告)日：2017-04-06

申请号：US14596349

申请日：2015-01-14

Applicant: NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY

Inventor： OWEN HILDRETH

IPC: H01L21/306

CPC classification number: C23C18/1608 ,  C23C18/1879 ,  C23C18/31 ,  C25F3/12 ,  H01L21/28506 ,  H01L21/306 ,  H01L21/30604 ,  H01Q17/00

Abstract: A process for etching includes disposing an activating catalyst on a substrate; providing a vapor composition that includes an etchant oxidizer, an activatable etchant, or a combination thereof; contacting the activating catalyst with the etchant oxidizer; contacting the substrate with the activatable etchant; performing an oxidation-reduction reaction between the substrate, the activatable etchant, and the etchant oxidizer in a presence of the activating catalyst and the vapor composition; forming an etchant product that includes a plurality of atoms from the substrate; and removing the etchant product from the substrate to etch the substrate.