公开(公告)号：US20220157978A1

公开(公告)日：2022-05-19

申请号：US17105550

申请日：2020-11-26

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Hong-Chih Chen ,  Hao-Xuan Zheng ,  Yu-Shan Lin ,  Fu-Yuan Jin ,  Fong-Min Ciou ,  Yun-Hsuan Lin ,  Mao-Chou Tai ,  Wen-Chung Chen

IPC: H01L29/778 ,  H01L29/20

Abstract: A p-GaN high electron mobility transistor is disclosed. The p-GaN high electron mobility transistor includes a substrate, a channel layer located on the substrate, a supply layer laminated on the channel layer, and a doped layer laminated on the supply layer. A doping concentration of the doped layer is gradually distributed, in which the doping concentration in a first doped region close to the supply layer is lower than a doping concentration in a second doped region distant from the supply layer. A gate electrode is located on the doped layer. A source electrode and a drain electrode are respectively electrically connected to the channel layer and the supply layer.

公开(公告)号：US20220123136A1

公开(公告)日：2022-04-21

申请号：US17200943

申请日：2021-03-15

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Hong-Chih Chen ,  Hao-Xuan Zheng ,  Yu-Shan Lin ,  Fu-Yuan Jin ,  Fong-Min Ciou ,  Yun-Hsuan Lin ,  Mao-Chou Tai ,  Wen-Chung Chen

IPC: H01L29/778 ,  H01L29/20

Abstract: A GaN high electron mobility transistor is disclosed. The GaN high electron mobility transistor includes a substrate, a buffer layer located on the substrate, a barrier layer laminated on the buffer layer, a channel layer laminated on the barrier layer, a supply layer laminated on the channel layer. The barrier layer has either a p-type semiconductor or a wide band gap material. A gate electrode is located on the supply layer. A source electrode and a drain electrode are electrically connected to the channel layer and the supply layer.