公开(公告)号：US20220123136A1

公开(公告)日：2022-04-21

申请号：US17200943

申请日：2021-03-15

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Hong-Chih Chen ,  Hao-Xuan Zheng ,  Yu-Shan Lin ,  Fu-Yuan Jin ,  Fong-Min Ciou ,  Yun-Hsuan Lin ,  Mao-Chou Tai ,  Wen-Chung Chen

IPC: H01L29/778 ,  H01L29/20

Abstract: A GaN high electron mobility transistor is disclosed. The GaN high electron mobility transistor includes a substrate, a buffer layer located on the substrate, a barrier layer laminated on the buffer layer, a channel layer laminated on the barrier layer, a supply layer laminated on the channel layer. The barrier layer has either a p-type semiconductor or a wide band gap material. A gate electrode is located on the supply layer. A source electrode and a drain electrode are electrically connected to the channel layer and the supply layer.

公开(公告)号：US11289592B2

公开(公告)日：2022-03-29

申请号：US16906109

申请日：2020-06-19

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Yu-Ching Tsao ,  Yu-Lin Tsai ,  Po-Hsun Chen ,  Yu-Shan Lin ,  Wen-Chung Chen

IPC: H01L29/778

Abstract: A structure to increase the breakdown voltage of the high electron mobility transistor is provided to solve the problem of function loss under a high voltage state. The structure includes a substrate, a conducting layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper portion of the conducting layer is an electron supply layer, and the lower portion of the conducting layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer. The electric-field-dispersion layer is laminated on the gate insulating layer. The dielectric constant of the electric-field-dispersion layer is smaller than that of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. A source and a drain electrodes are respectively electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer, and the electron tunnel layer.

公开(公告)号：US20170317281A1

公开(公告)日：2017-11-02

申请号：US15213583

申请日：2016-07-19

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Kuan-Chang Chang ,  Tsung-Ming Tsai ,  Chih-Cheng Shih ,  Chih-Hung Pan

IPC: H01L45/00

Abstract: A resistive random access memory overcomes the low durability of the conventional resistive random access memory. The resistive random access memory includes a first electrode, a second electrode, an enclosing layer and an oxygen-containing resistance changing layer. The first and second electrodes are separate from each other. The enclosing layer forms a first via-hole. The oxygen-containing resistance changing layer is arranged for the first via-hole. The first and second electrodes and the enclosing layer jointly enclose the oxygen-containing resistance changing layer. Each of the first electrode, the second electrode and the enclosing layer is made of an element not containing oxygen.

公开(公告)号：US09711720B2

公开(公告)日：2017-07-18

申请号：US14734809

申请日：2015-06-09

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Kuan-Chang Chang ,  Tsung-Ming Tsai ,  Tian-Jian Chu ,  Chih-Hung Pan

IPC: H01L45/00

CPC classification number: H01L45/1253 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/145 ,  H01L45/146

Abstract: A resistive random access memory including a first electrode, a separating medium, a resistance changing layer and a second electrode is disclosed. The first electrode has a mounting face. The separating medium is arranged on the first electrode and forms a through hole. A part of the first electrode is not covered by the separating medium. The separating medium has a first dielectric. The resistance changing layer extends along the part of the first electrode as well as along an inner face and the second face of the separating medium. The resistance changing layer has a second dielectric having a dielectric constant larger than a dielectric constant of the first dielectric by 2 or less. The second electrode is arranged on the resistance changing layer. In this arrangement, the problem of unstable forming voltage of the conventional resistive random access memory can be solved.

公开(公告)号：US09647020B2

公开(公告)日：2017-05-09

申请号：US14800481

申请日：2015-07-15

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Hua-Mao Chen ,  Ming-Yen Tsai ,  Min-Chen Chen

IPC: H01L27/146 ,  H01L31/101

CPC classification number: H01L27/14612 ,  H01L27/14643 ,  H01L31/101

Abstract: A light sensing circuit for solving the problem of low reliability in illumination detection includes a photo transistor having a gate, a drain and a source; a first transistor electrically connecting between the gate and source of the photo transistor; a first capacitor electrically connecting between the gate and the drain of the photo transistor; a second transistor electrically connecting with the drain of the photo transistor, the first capacitor, and a data signal; a second capacitor electrically connecting between the source of the photo transistor and a ground contact; a third transistor electrically connecting with the photo transistor, the first transistor, and the second capacitor; and a switch adapted to alternatively connect the third transistor with a buffer or a zero signal. A control method of the above light sensing circuit is also disclosed. Therefore, the above identified problem can be surely solved.

公开(公告)号：US12218230B2

公开(公告)日：2025-02-04

申请号：US17868104

申请日：2022-07-19

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Mao-Chou Tai ,  Yu-Xuan Wang ,  Wei-Chen Huang ,  Ting-Tzu Kuo ,  Kai-Chun Chang ,  Shih-Kai Lin

IPC: H01L21/00 ,  H01L29/20 ,  H01L29/778

Abstract: A p-GaN high-electron-mobility transistor, includes a substrate, a channel layer stacked on the substrate, a supply layer stacked on the channel layer, a first doped layer stacked on the supply layer, a second doped layer stacked on the first doped layer, and a third doped layer stacked on the second doped layer. A doping concentration of the first doped layer and the doping concentration of the third doped layer are lower than a doping concentration of the second doped layer. A gate is located on the third doped layer, and a source and a drain are electrically connected to the channel layer and the supply layer, respectively.

公开(公告)号：US20220069208A1

公开(公告)日：2022-03-03

申请号：US17088736

申请日：2020-11-04

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Yi-Ting Tseng ,  Chun-Chu Lin ,  Wen-Chung Chen ,  Shih-Kai Lin ,  Po-Hsun Chen

IPC: H01L45/00 ,  H01L27/24

Abstract: A resistive random access memory and an initialization method thereof are disclosed. The initialization method includes irradiating a memory device with an electromagnetic wave and manipulating a switching voltage to switch the memory device between a high resistance state and a low resistance state. The electromagnetic wave has a frequency of above 1016 Hertz. The resistive random access memory includes a plurality of memory devices and a switching circuit respectively electrically connected to the plurality of memory devices. Each of the plurality of memory devices has a resistance-changing layer and two electrode layers respectively located on an upper surface and a lower surface of the resistance-changing layer.

公开(公告)号：US20220037531A1

公开(公告)日：2022-02-03

申请号：US17017732

申请日：2020-09-11

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Yu-Lin Tsai ,  Yu-Ching Tsao ,  Hong-Chih Chen ,  Shin-Ping Huang ,  Mao-Chou Tai ,  Po-Hsun Chen

IPC: H01L29/786 ,  H01L29/24 ,  H01L29/49 ,  H01L21/02 ,  H01L29/66

Abstract: A thin film transistor is used to solve a problem of low process efficiency of the conventional thin film transistor in preventing hydrogen diffusion. The thin film transistor includes a substrate, multilayer thin films laminated on the substrate, and at least one fluorine-containing thin film laminated in substitution for the multilayer thin films. Each of the multilayer thin films is a gate insulating layer, an active layer, a buffer layer, and a dielectric layer or a protective layer. Each of the at least one fluorine-containing thin film is a fluorine-doped insulating layer, a fluorine-doped active layer, a fluorine-doped buffer layer, and a fluorine-doped dielectric layer or a fluorine-doped protective layer. The invention further discloses a method for manufacturing the thin film transistor.

公开(公告)号：US20190291401A1

公开(公告)日：2019-09-26

申请号：US16016802

申请日：2018-06-25

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Chih-Cheng Shih ,  Ming-Hui Wang ,  Wen-Chung Chen ,  Chih-Yang Lin

IPC: B32B37/10 ,  B32B43/00

Abstract: A method for bonding a first component to a second component includes placing the first and second components in a cavity. Each of the first and second components has a bonding portion, and the bonding portion of the first component faces the bonding portion of the second component. A supercritical fluid is then introduced into the cavity with a temperature of 40-400° C. and a pressure of 1,500-100,000 psi, and a pressure of 4-100,000 psi is applied on both the first and second components, assuring the bonding portion of the first component bond to the bonding portion of the second component. Moreover, a method for separating a first component from a second component includes placing a composite in a cavity. The composite includes the first component, the second component and a connecting layer by which the first component joins to the second component. The supercritical is then introduced into the cavity.

公开(公告)号：US20180136154A1

公开(公告)日：2018-05-17

申请号：US15471760

申请日：2017-03-28

Applicant: NATIONAL SUN YAT-SEN UNIVERSITY

Inventor： Ting-Chang Chang ,  Hua-Mao Chen ,  Hsiao-Cheng Chiang ,  Yu-Ching Tsao ,  Min-Chen Chen

IPC: G01N27/02 ,  H01L29/24 ,  H01L29/786 ,  G01N33/497 ,  G01N33/00

CPC classification number: G01N33/0047 ,  G01N27/4141 ,  G01N33/4972 ,  H01L29/24 ,  H01L29/7869

Abstract: A gas detection module is provided with a convenient detection mechanism of the alcohol gas. The gas detection module may include a gas sensor and a detection circuit. The gas sensor includes a substrate, a gate, an insulating layer, an active layer, a source and a drain. The gate is disposed on the substrate. The insulating layer is disposed on the gate and the substrate. The active layer is disposed on the insulating layer. Each of the source and the drain is partially arranged on the active layer and extends to the insulating layer. The active layer is exposed from between the source and the drain. The detection circuit is electrically connected to the source of the gas sensor. Based on this, the deficiency of the conventional gas detection module can be overcome.