公开(公告)号：US20030010996A1

公开(公告)日：2003-01-16

申请号：US10191477

申请日：2002-07-10

Applicant: NEC CORPORATION

Inventor： Hiroo Hongo

IPC: H01L029/74 ,  H01L031/111

CPC classification number: H01J1/308

Abstract: A cold cathode device is formed from a p-type semiconductor substrate 1. Two source/drain regions 2 are formed in the p-type semiconductor substrate 1, a silicon oxide film 3, which is an insulating film, is formed on the surface of the p-type semiconductor substrate 1 (the face where the source/drain regions 2 are formed), and a gate electrode 4 is formed on top of the silicon oxide film 3. Furthermore, a substrate electrode 5 is formed on the back surface of the p-type semiconductor substrate 1. The same voltages are applied to the source/drain regions 2 and the gate electrode 4, and a lower voltage is applied to the substrate electrode 5.

Abstract translation: 冷阴极器件由p型半导体衬底1形成。在p型半导体衬底1中形成两个源极/漏极区域2，在绝缘膜的表面上形成作为绝缘膜的氧化硅膜3 p型半导体衬底1（形成源极/漏极区域2的面）和栅电极4形成在氧化硅膜3的顶部。此外，衬底电极5形成在氧化硅膜3的背面 p型半导体衬底1.对源极/漏极区域2和栅极电极4施加相同的电压，并且向衬底电极5施加较低的电压。