公开(公告)号：US20010023780A1

公开(公告)日：2001-09-27

申请号：US09812817

申请日：2001-03-21

Applicant: NEC CORPORATION

Inventor： Shigeru Mori

IPC: H05K001/03

CPC classification number: H05K1/0271 ,  H05K3/4602 ,  H05K3/4623 ,  H05K3/4626 ,  H05K3/4688 ,  H05K2201/0278 ,  H05K2201/068 ,  H05K2201/09536 ,  H05K2201/0959

Abstract: A printed wiring board is formed by a printed wiring substrate having a plurality of a wiring layer, and a thermal expansion buffering sheet having lower coefficient of thermal expansion than that of said printed wiring substrate, which is integrally laminated on a surface of the printed wiring substrate.

Abstract translation: 印刷布线板由具有多个布线层的印刷布线基板和热膨胀系数比所述印刷布线基板的热膨胀系数低的热膨胀缓冲片形成，该片材整体层压在印刷布线的表面上 基质。

公开(公告)号：US20020086182A1

公开(公告)日：2002-07-04

申请号：US10033669

申请日：2001-12-28

Applicant: NEC Corporation

Inventor： Junichi Fujikata ,  Tsutomu Ishi ,  Shigeru Mori

IPC: G11B005/39

CPC classification number: H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/00 ,  G11B5/3903 ,  G11B5/3909 ,  H01F10/3268 ,  H01L43/12 ,  Y10T428/1114

Abstract: In a spin tunnel magnetoresistive effect film in which a magnetic thin film to which an exchange bias is applied by exchange coupling via an anti-ferromagnetic thin film and a magnetic thin film that detects a magnetic field are laminated, a magnetic thin film or an anti-ferromagnetic thin film (PtMn, PdMn, NiMn) is laminated onto an underlayer (Ta, Zr, Hf), the surface roughness thereof being in the range from 0.1 to 5 Angstroms. A means used to control the surface roughness introduces into the film growing chamber oxygen, nitrogen, hydrogen, or a gas mixture thereof into a vacuum of 10null6 Torr to 10null9 Torr, reduces the substrate temperature to 0null C. or lower during film growth, or oxidizes an underlayer. The lower electrode layer material used is a film laminate of a high-permeability amorphous magnetic material and a non-magnetic metallic layer.

Abstract translation: 在通过反铁磁性薄膜进行交换耦合而施加了交换偏压的磁性薄膜和检测磁场的磁性薄膜的自旋隧道磁阻效应薄膜中，形成磁性薄膜或抗反射膜 将铁磁性薄膜（PtMn，PdMn，NiMn）层压到底层（Ta，Zr，Hf）上，其表面粗糙度在0.1〜5埃的范围内。 用于控制表面粗糙度的手段将氧气，氮气，氢气或其气体混合物引入到10 -6 Torr至10 -9 Torr的真空中，将衬底温度降至0℃或更低 在膜生长期间，或氧化底层。 所使用的下电极层材料是高磁导率非晶磁性材料和非磁性金属层的膜层叠体。