公开(公告)号：US09112099B2

公开(公告)日：2015-08-18

申请号：US14398139

申请日：2013-01-28

Applicant: NEXCIS

Inventor： Brendan Dunne

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0749 ,  H01L31/0463 ,  H01L31/042

CPC classification number: H01L31/186 ,  H01L31/042 ,  H01L31/0463 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

Abstract: A treatment of thin layers for forming a connection of a photovoltaic cell including the thin layers, which includes a first layer, having photovoltaic properties, deposited on a second layer, and the second layer, which is a metal contact layer, deposited on a substrate, the treatment including etching, in the first layer, at least one first trench having a first width so as to expose the second layer; and etching, in the first trench, a second trench so as to expose the substrate, the second trench having a second width less than the first width.

Abstract translation: 用于形成包括沉积在基板上的包括沉积在第二层上的具有光伏特性的第一层和作为金属接触层的第二层的薄层的光伏电池的连接的薄层处理 所述处理包括在所述第一层中蚀刻具有第一宽度的至少一个第一沟槽以暴露所述第二层; 并且在所述第一沟槽中蚀刻第二沟槽以暴露所述衬底，所述第二沟槽具有小于所述第一宽度的第二宽度。

公开(公告)号：US20150087103A1

公开(公告)日：2015-03-26

申请号：US14398139

申请日：2013-01-28

Applicant: NEXCIS

Inventor： Brendan Dunne

IPC: H01L31/18 ,  H01L31/042

CPC classification number: H01L31/186 ,  H01L31/042 ,  H01L31/0463 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

Abstract: A treatment of thin layers for forming a connection of a photovoltaic cell including the thin layers, which includes a first layer, having photovoltaic properties, deposited on a second layer, and the second layer, which is a metal contact layer, deposited on a substrate, the treatment including etching, in the first layer, at least one first trench having a first width so as to expose the second layer; and etching, in the first trench, a second trench so as to expose the substrate, the second trench having a second width less than the first width.

Abstract translation: 用于形成包括沉积在基板上的包括沉积在第二层上的具有光伏特性的第一层和作为金属接触层的第二层的薄层的光伏电池的连接的薄层处理 所述处理包括在所述第一层中蚀刻具有第一宽度的至少一个第一沟槽以暴露所述第二层; 并且在所述第一沟槽中蚀刻第二沟槽以暴露所述衬底，所述第二沟槽具有小于所述第一宽度的第二宽度。