公开(公告)号：US09478695B2

公开(公告)日：2016-10-25

申请号：US14358185

申请日：2012-11-22

Applicant: NEXCIS

Inventor： Stephanie Angle ,  Ludovic Parissi

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/0749 ,  H01L31/0296 ,  H01L21/02 ,  H01L31/032 ,  H01L31/0392

CPC classification number: H01L31/1864 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02658 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: The invention relates to a method of manufacturing a I-III-VI2 layer with photovoltaic properties, comprising: deposition of a metal on a substrate to form a contact layer, deposition of a precursor of the photovoltaic layer, on the contact layer, and heat treatment of the precursor with an addition of element VI to form the I-III-VI2 layer. The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer.In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.

Abstract translation: 在本发明的方法中，金属沉积包括在金属中添加另外的元素以在接触层中形成化合物（MO-EA）的步骤，其作为元件VI的扩散的屏障， 这允许精确控制表层的性质，特别是其厚度。

公开(公告)号：US20140315346A1

公开(公告)日：2014-10-23

申请号：US14358185

申请日：2012-11-22

Applicant: NEXCIS

Inventor： Stephanie Angle ,  Ludovic Parissi

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/1864 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02658 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: The invention relates to a method of manufacturing a I-III-VI2 layer with photovoltaic properties, comprising: deposition of a metal on a substrate to form a contact layer, deposition of a precursor of the photovoltaic layer, on the contact layer, and heat treatment of the precursor with an addition of element VI to form the layer. The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer. In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.

Abstract translation: 本发明涉及一种制造具有光伏特性的I-III-VI2层的方法，包括：在衬底上沉积金属以形成接触层，在接触层上淀积光伏层的前体，并加热 用添加元素VI处理前体以形成该层。 元件VI通常在热处理期间扩散到接触层（MO）中并与金属组合以在接触层上形成表面层（SUP）。 在本发明的方法中，金属沉积包括在金属中添加另外的元素以在接触层中形成化合物（MO-EA）的步骤，其作为元件VI的扩散的屏障， 这允许精确控制表层的性质，特别是其厚度。

公开(公告)号：US20170170359A1

公开(公告)日：2017-06-15

申请号：US15116979

申请日：2014-12-29

Applicant: NEXCIS

Inventor： Brendan DUNNE ,  Stéphanie ANGLE

IPC: H01L31/18

CPC classification number: H01L31/1864 ,  H01L31/047 ,  H01L31/0475 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

Abstract: A method for producing a thin-film solar cell on an initial substrate, the thin-film solar cell being removable from the initial substrate, the thin-film solar cell including a rear metal layer and a thin-film stack including a p-n junction, the method including depositing the rear metal layer on the initial substrate by sputtering; forming the thin-film stack on the rear metal layer, wherein the power, temperature and pressure used to deposit the rear metal layer are chosen so as to introduce shear stress into the rear metal layer in a controlled manner.

公开(公告)号：US20150338212A1

公开(公告)日：2015-11-26

申请号：US14651414

申请日：2013-12-09

Applicant: NEXCIS ,  UNIVERSITE D'AIX-MARSEILLE

Inventor： Antonin MOREAU ,  Véronica BERMUDEZ ,  Ludovic ESCOUBAS ,  Jean-Jacques SIMON

IPC: G01B11/30

CPC classification number: G01B11/303 ,  G01N21/1717 ,  G01N2021/1725 ,  G01N2201/065

Abstract: A photoreflectance device for characterizing a rough surface includes a pump beam emitter to emit a pump beam; a probe beam emitter to emit a probe beam; a detector to detect the probe beam reflected by the surface; an integrating sphere to collect the probe beam reflected by the surface, the integrating sphere including: a first output connected to the detector, and disposed so as to receive a majority of the probe beam reflected by the surface; a second output arranged so as to receive a majority of the pump beam reflected by the surface.

Abstract translation: 用于表征粗糙表面的光反射装置包括：泵浦光束发射器，用于发射泵浦光束; 用于发射探测光束的探测光束发射器; 用于检测由表面反射的探测光束的检测器; 用于收集由表面反射的探测光束的积分球，所述积分球包括：连接到所述检测器的第一输出，并且被设置为接收由所述表面反射的所述探测光束的大部分; 布置成接收由表面反射的泵浦光束的大部分的第二输出。

公开(公告)号：US09377300B2

公开(公告)日：2016-06-28

申请号：US14651414

申请日：2013-12-09

Applicant: NEXCIS ,  UNIVERSITE D'AIX MARSEILLE

Inventor： Antonin Moreau ,  Véronica Bermudez ,  Ludovic Escoubas ,  Jean-Jacques Simon

IPC: G01B11/30 ,  G01N21/17

CPC classification number: G01B11/303 ,  G01N21/1717 ,  G01N2021/1725 ,  G01N2201/065

Abstract: A photoreflectance device for characterizing a rough surface includes a pump beam emitter to emit a pump beam; a probe beam emitter to emit a probe beam; a detector to detect the probe beam reflected by the surface; an integrating sphere to collect the probe beam reflected by the surface, the integrating sphere including: a first output connected to the detector, and disposed so as to receive a majority of the probe beam reflected by the surface; a second output arranged so as to receive a majority of the pump beam reflected by the surface.

Abstract translation: 用于表征粗糙表面的光反射装置包括：泵浦光束发射器，用于发射泵浦光束; 用于发射探测光束的探测光束发射器; 用于检测由表面反射的探测光束的检测器; 用于收集由表面反射的探测光束的积分球，所述积分球包括：连接到所述检测器的第一输出，并且被设置为接收由所述表面反射的所述探测光束的大部分; 布置成接收由表面反射的泵浦光束的大部分的第二输出。

公开(公告)号：US20160079454A1

公开(公告)日：2016-03-17

申请号：US14888786

申请日：2014-04-30

Applicant: NEXCIS

Inventor： Cedric Broussillou ,  Sylvie Bodnar

IPC: H01L31/032 ,  H01L21/677 ,  F27D7/06 ,  H01L31/036 ,  F27B9/10 ,  H01L31/18 ,  H01L21/67

CPC classification number: H01L31/0322 ,  F27B9/10 ,  F27D7/06 ,  F27D2007/063 ,  F27D2019/0093 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/67109 ,  H01L21/67248 ,  H01L21/677 ,  H01L31/036 ,  H01L31/18

Abstract: A process for forming a semiconductor layer, especially with a view to photovoltaic applications, and more particularly to a process for forming a semiconductor layer of I-III-VI2 type by heat treatment and chalcogenization of a metallic precursor of I-III type, the process comprising: a heating step under an inert atmosphere during which the temperature increases uniformly up to a first temperature of between 460° C. and 540° C., in order to enable the densification of the metallic precursor, and a chalcogenization step beginning at said first temperature and during which the temperature continues to increase up to a second temperature, a stabilization temperature, of between 550° C. and 600° C., in order to enable the formation of the semiconductor layer. The formation of a semiconductor layer, or equivalently of an absorber, having a gain in conversion efficiency of around 4%, is thus advantageously achieved.

Abstract translation: 一种用于形成半导体层的方法，特别是考虑到光伏应用，更具体地涉及通过I-III型金属前体的热处理和硫属化形成I-III-VI2型半导体层的方法， 方法包括：在惰性气氛下的加热步骤，其中温度均匀升高至460℃至540℃之间的第一温度，以便使金属前体致密化，以及从 所述第一温度在550℃至600℃之间，其中温度继续升高至第二温度，稳定温度，以便能够形成半导体层。 因此有利地实现了具有约4％的转换效率增益的半导体层或等效于吸收体的形成。

公开(公告)号：US09112099B2

公开(公告)日：2015-08-18

申请号：US14398139

申请日：2013-01-28

Applicant: NEXCIS

Inventor： Brendan Dunne

IPC: H01L21/00 ,  H01L31/18 ,  H01L31/0749 ,  H01L31/0463 ,  H01L31/042

CPC classification number: H01L31/186 ,  H01L31/042 ,  H01L31/0463 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

Abstract: A treatment of thin layers for forming a connection of a photovoltaic cell including the thin layers, which includes a first layer, having photovoltaic properties, deposited on a second layer, and the second layer, which is a metal contact layer, deposited on a substrate, the treatment including etching, in the first layer, at least one first trench having a first width so as to expose the second layer; and etching, in the first trench, a second trench so as to expose the substrate, the second trench having a second width less than the first width.

Abstract translation: 用于形成包括沉积在基板上的包括沉积在第二层上的具有光伏特性的第一层和作为金属接触层的第二层的薄层的光伏电池的连接的薄层处理 所述处理包括在所述第一层中蚀刻具有第一宽度的至少一个第一沟槽以暴露所述第二层; 并且在所述第一沟槽中蚀刻第二沟槽以暴露所述衬底，所述第二沟槽具有小于所述第一宽度的第二宽度。

公开(公告)号：US20150087103A1

公开(公告)日：2015-03-26

申请号：US14398139

申请日：2013-01-28

Applicant: NEXCIS

Inventor： Brendan Dunne

IPC: H01L31/18 ,  H01L31/042

CPC classification number: H01L31/186 ,  H01L31/042 ,  H01L31/0463 ,  H01L31/0749 ,  H01L31/18 ,  Y02E10/541

Abstract: A treatment of thin layers for forming a connection of a photovoltaic cell including the thin layers, which includes a first layer, having photovoltaic properties, deposited on a second layer, and the second layer, which is a metal contact layer, deposited on a substrate, the treatment including etching, in the first layer, at least one first trench having a first width so as to expose the second layer; and etching, in the first trench, a second trench so as to expose the substrate, the second trench having a second width less than the first width.

Abstract translation: 用于形成包括沉积在基板上的包括沉积在第二层上的具有光伏特性的第一层和作为金属接触层的第二层的薄层的光伏电池的连接的薄层处理 所述处理包括在所述第一层中蚀刻具有第一宽度的至少一个第一沟槽以暴露所述第二层; 并且在所述第一沟槽中蚀刻第二沟槽以暴露所述衬底，所述第二沟槽具有小于所述第一宽度的第二宽度。