公开(公告)号：US09478695B2

公开(公告)日：2016-10-25

申请号：US14358185

申请日：2012-11-22

Applicant: NEXCIS

Inventor： Stephanie Angle ,  Ludovic Parissi

IPC: H01L31/18 ,  H01L31/0224 ,  H01L31/04 ,  H01L31/0749 ,  H01L31/0296 ,  H01L21/02 ,  H01L31/032 ,  H01L31/0392

CPC classification number: H01L31/1864 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02658 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: The invention relates to a method of manufacturing a I-III-VI2 layer with photovoltaic properties, comprising: deposition of a metal on a substrate to form a contact layer, deposition of a precursor of the photovoltaic layer, on the contact layer, and heat treatment of the precursor with an addition of element VI to form the I-III-VI2 layer. The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer.In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.

Abstract translation: 在本发明的方法中，金属沉积包括在金属中添加另外的元素以在接触层中形成化合物（MO-EA）的步骤，其作为元件VI的扩散的屏障， 这允许精确控制表层的性质，特别是其厚度。

公开(公告)号：US20140315346A1

公开(公告)日：2014-10-23

申请号：US14358185

申请日：2012-11-22

Applicant: NEXCIS

Inventor： Stephanie Angle ,  Ludovic Parissi

IPC: H01L31/18 ,  H01L31/032

CPC classification number: H01L31/1864 ,  H01L21/02491 ,  H01L21/02568 ,  H01L21/02614 ,  H01L21/02658 ,  H01L31/022425 ,  H01L31/0296 ,  H01L31/0322 ,  H01L31/0392 ,  H01L31/03928 ,  H01L31/0749 ,  Y02E10/541 ,  Y02P70/521

Abstract: The invention relates to a method of manufacturing a I-III-VI2 layer with photovoltaic properties, comprising: deposition of a metal on a substrate to form a contact layer, deposition of a precursor of the photovoltaic layer, on the contact layer, and heat treatment of the precursor with an addition of element VI to form the layer. The element VI usually diffuses into the contact layer (MO) during the heat treatment and combines with the metal to form a superficial layer (SUP) on the contact layer. In the method of the invention, the metal deposition comprises a step during which an additional element is added to the metal to form a compound (MO-EA), in the contact layer, acting as a barrier to the diffusion of the element VI, which allows precisely controlling the properties of the superficial layer, particularly its thickness.

Abstract translation: 本发明涉及一种制造具有光伏特性的I-III-VI2层的方法，包括：在衬底上沉积金属以形成接触层，在接触层上淀积光伏层的前体，并加热 用添加元素VI处理前体以形成该层。 元件VI通常在热处理期间扩散到接触层（MO）中并与金属组合以在接触层上形成表面层（SUP）。 在本发明的方法中，金属沉积包括在金属中添加另外的元素以在接触层中形成化合物（MO-EA）的步骤，其作为元件VI的扩散的屏障， 这允许精确控制表层的性质，特别是其厚度。