FORMATION OF BISMUTH STRONTIUM CALCIUM COPPER OXIDE SUPERCONDUCTORS
    1.
    发明申请
    FORMATION OF BISMUTH STRONTIUM CALCIUM COPPER OXIDE SUPERCONDUCTORS 审中-公开
    二氧化锡钙氧化物超导体的形成

    公开(公告)号:US20150270471A1

    公开(公告)日:2015-09-24

    申请号:US14433986

    申请日:2013-10-08

    Abstract: A BÏ2212 article may be formed by mixing metallic precursor powders including bismuth, strontium, calcium and copper in an oxygen-free atmosphere, mechanically alloying the metallic precursor powders in an oxygen-free atmosphere, and heating the metallic precursor alloy according to a temperature profile. The profile may include a ramp-up stage during which the alloy is heated to a peak temperature in an oxygen-free atmosphere, a dwell stage during which the alloy is held at the peak temperature for a dwell time, and a ramp-down stage during which the alloy is cooled from the peak temperature. During at least a portion of the dwell stage, the oxygen-free atmosphere is switched to an oxygen-inclusive atmosphere, wherein the alloy is oxidized to form a superconducting oxide, which may be sintered during or after oxidation. The alloy may be formed into a shape, such as a wire, prior to oxidizing.

    Abstract translation: 可以通过在无氧气氛中混合包括铋,锶,钙和铜的金属前体粉末,在无氧气氛中机械合金化金属前体粉末,并根据温度曲线加热金属前体合金来形成BÏ2212制品 。 该轮廓可以包括加速阶段,在该阶段期间,合金在无氧气氛中被加热至峰值温度,在此期间合金保持在峰值温度下停留时间的停留阶段,以及斜坡下降阶段 在此期间,合金从峰值温度冷却。 在停留阶段的至少一部分期间,将无氧气氛切换到含氧气氛,其中该合金被氧化以形成可在氧化期间或之后烧结的超导氧化物。 在氧化之前,该合金可以形成为诸如电线的形状。

    NANOPARTICLE COMPACT MATERIALS FOR THERMOELECTRIC APPLICATION
    2.
    发明申请
    NANOPARTICLE COMPACT MATERIALS FOR THERMOELECTRIC APPLICATION 审中-公开
    用于热电应用的纳米材料紧凑材料

    公开(公告)号:US20140318593A1

    公开(公告)日:2014-10-30

    申请号:US14359817

    申请日:2012-11-21

    CPC classification number: H01L35/16 H01L35/18 H01L35/28 Y10T428/268

    Abstract: A thermoelectric composite and a thermoelectric device and a method of making the thermoelectric composite. The thermoelectric composite is a semiconductor material formed from mechanically-alloyed powders of elemental constituents of the semiconductor material to produce nano-particles of the semiconductor material, and compacted to have at least a bifurcated grain structure. The bifurcated grain structure has at least two different grain sizes including small size grains in a range of 2-200 nm and large size grains in a range of 0.5 to 5 microns. The semiconductor material has a figure of merit ZT, defined as a ratio of the product of square of Seebeck coefficient, S2, and electrical conductivity σ divided by the thermal conductivity k, which varies from greater than 1 at 300 K to 2.5 at temperatures of 300 to 500K.

    Abstract translation: 热电复合材料和热电元件以及制造热电复合材料的方法。 热电复合体是由半导体材料的元素成分的机械合金化粉末形成的半导体材料,以制造半导体材料的纳米颗粒,并且被压制成具有至少一个分叉的晶粒结构。 分叉晶粒结构具有至少两种不同的晶粒尺寸,包括在2-200nm范围内的小尺寸晶粒和0.5至5微米范围内的大尺寸晶粒。 半导体材料具有品质因数ZT,定义为塞贝克系数的平方乘积,S2和电导率的乘积比; 除以热导率k,其在300至500K的温度下在300K下从大于1变化至2.5。

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