Abstract:
A radiation detection device includes a sensor having a first electrode and a second electrode. The first and second electrode each defines a plurality of fingers comprising a nanotube material, and the fingers of each electrode are interdigitated with one another. A voltage source may be configured to apply a voltage across the first and second electrodes. A chamber contains the sensor with a gas, one or more walls of the chamber enabling passage of radiation external to the chamber. A detection circuit detects radiation within the chamber based on a change in current across the first and second electrodes resulting from ionization of the gas by the radiation.
Abstract:
Heterojunctions of single-walled carbon nanotubes and p-doped silicon produce a photocurrent when irradiated with visible light under reverse bias conditions. In optoelectronic devices utilizing the heterojunctions, the output current can be controlled completely by both optical and electrical inputs. The heterojunctions provide a platform for heterogeneous optoelectronic logic elements with high voltage-switchable photocurrent, photo-voltage responsivity, electrical ON/OFF ratio, and optical ON/OFF ratio. The devices are combined to make switches, logic elements, and imaging sensors. An assembly of 250,000 sensor elements on a centimeter-scale wafer is also provided, with each sensor element having a heterojunction of single-walled carbon nanotubes and p-doped silicon, and producing a current dependent on both the optical and the electrical input.