Optoelectronic Devices Based on Heterojunctions of Single-Walled Carbon Nanotubes and Silicon
    2.
    发明申请
    Optoelectronic Devices Based on Heterojunctions of Single-Walled Carbon Nanotubes and Silicon 审中-公开
    基于单壁碳纳米管和硅的异质结的光电器件

    公开(公告)号:US20150228917A1

    公开(公告)日:2015-08-13

    申请号:US14428398

    申请日:2013-09-19

    Abstract: Heterojunctions of single-walled carbon nanotubes and p-doped silicon produce a photocurrent when irradiated with visible light under reverse bias conditions. In optoelectronic devices utilizing the heterojunctions, the output current can be controlled completely by both optical and electrical inputs. The heterojunctions provide a platform for heterogeneous optoelectronic logic elements with high voltage-switchable photocurrent, photo-voltage responsivity, electrical ON/OFF ratio, and optical ON/OFF ratio. The devices are combined to make switches, logic elements, and imaging sensors. An assembly of 250,000 sensor elements on a centimeter-scale wafer is also provided, with each sensor element having a heterojunction of single-walled carbon nanotubes and p-doped silicon, and producing a current dependent on both the optical and the electrical input.

    Abstract translation: 单壁碳纳米管和p掺杂硅的杂质在反向偏压条件下用可见光照射时产生光电流。 在利用异质结的光电器件中,输出电流可以通过光输入和电输入完全控制。 异质结为具有高电压切换光电流,光电压响应度,电开/关比和光ON / OFF比的异质光电逻辑元件提供了一个平台。 这些器件被组合以制造开关,逻辑元件和成像传感器。 还提供了在厘米级晶片上的25万个传感器元件的组件,每个传感器元件具有单壁碳纳米管和p掺杂硅的异质结,并产生取决于光学和电气输入的电流。

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