公开(公告)号：US20250123571A1

公开(公告)日：2025-04-17

申请号：US18855303

申请日：2023-04-07

Applicant: NOVA LTD.

Inventor： Eitan A. ROTHSTEIN ,  Harindra VEDALA ,  Effi ABOODY ,  Noam TAL ,  Jacob COHEN ,  Michael SHIFRIN ,  Nir Kampel ,  Lilach TAMAM ,  Avron GER

IPC: G03F7/00

Abstract: A system and methods for OCD metrology are provided including receiving training data for training an OCD machine learning (ML) model, the training data measured from multiple wafers and including multiple pairs of corresponding input and label datasets obtained from each respective wafer. The input dataset of each pair includes multiple scatterometric datasets, measured at multiple respective locations defined by a first map. The label dataset of each pair includes one or more critical dimension (CD) parameters of respective locations defined by a second map, the second map including at least one location not in the first map. The OCD ML model is then applied to a new set of scatterometric datasets, measured from locations of a new wafer, according to the first map, to generate predicted CD parameters of locations of the second map on the new wafer.