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1.发明公开公开(公告)号：US20240087869A1
公开(公告)日：2024-03-14
申请号：US18469517
申请日：2023-09-18
Applicant: NOVA MEASURING INSTRUMENTS INC.
Inventor： David A. REED , Bruno W. SCHUELER , Bruce H. NEWCOME , Rodney SMEDT , Chris BEVIS
CPC classification number: H01J49/142 , G01N23/22 , G01N23/2258 , G01Q10/04 , H01J49/126 , H01J49/26 , H01L22/12
Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
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公开(公告)号：US20220390395A1
公开(公告)日：2022-12-08
申请号：US17754998
申请日：2020-10-22
Applicant: NOVA MEASURING INSTRUMENTS INC.
Inventor： David A. REED , Bruce H. NEWCOME , Bruno W. SCHUELER
IPC: G01N23/223 , G01N23/20008
Abstract: The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.
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Patent Agency Ranking
3.发明申请公开(公告)号：US20200258733A1
公开(公告)日：2020-08-13
申请号：US16856940
申请日：2020-04-23
Applicant: NOVA MEASURING INSTRUMENTS INC.
Inventor： David A. REED , Bruno W. SCHUELER , Bruce H. NEWCOME , Rodney SMEDT , Chris BEVIS
Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
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公开(公告)号：US20250006451A1
公开(公告)日：2025-01-02
申请号：US18675096
申请日：2024-05-27
Applicant: NOVA MEASURING INSTRUMENTS INC.
Inventor： David A. REED , Bruce H. NEWCOME , Bruno W. SCHUELER
IPC: H01J35/08 , G01N23/20008 , G01N23/207 , G01N23/2208 , G01N23/223 , H01J35/24
Abstract: The present invention is intended to provide improved patterned X-ray emitting targets as well as X-ray sources that include patterned X-ray emitting targets as well as X-ray reflectance scatterometry (XRS) systems and also including X-ray photoelectron spectroscopy (XPS) systems and X-ray fluorescence (XRF) systems which employ such X-ray emitting targets.
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5.发明申请公开(公告)号：US20190385831A1
公开(公告)日：2019-12-19
申请号：US16557197
申请日：2019-08-30
Applicant: NOVA MEASURING INSTRUMENTS INC.
Inventor： David A. REED , Bruno W. SCHUELER , Bruce H. NEWCOME , Rodney SMEDT , Chris BEVIS
Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
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公开(公告)号：US20230091625A1
公开(公告)日：2023-03-23
申请号：US17821785
申请日：2022-08-23
Applicant: NOVA MEASURING INSTRUMENTS INC.
Inventor： David A. REED , Bruno W. SCHUELER , Bruce H. NEWCOME , Rodney SMEDT , Chris BEVIS
Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
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公开(公告)号：US20210305037A1
公开(公告)日：2021-09-30
申请号：US17164499
申请日：2021-02-01
Applicant: NOVA MEASURING INSTRUMENTS INC.
Inventor： David A. REED , Bruno W. SCHUELER , Bruce H. NEWCOME , Rodney SMEDT , Chris BEVIS
Abstract: Systems and approaches for semiconductor metrology and surface analysis using Secondary Ion Mass Spectrometry (SIMS) are disclosed. In an example, a secondary ion mass spectrometry (SIMS) system includes a sample stage. A primary ion beam is directed to the sample stage. An extraction lens is directed at the sample stage. The extraction lens is configured to provide a low extraction field for secondary ions emitted from a sample on the sample stage. A magnetic sector spectrograph is coupled to the extraction lens along an optical path of the SIMS system. The magnetic sector spectrograph includes an electrostatic analyzer (ESA) coupled to a magnetic sector analyzer (MSA).
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