公开(公告)号：US20210233787A1

公开(公告)日：2021-07-29

申请号：US17151963

申请日：2021-01-19

Applicant: NuFlare Technology, Inc.

Inventor： Yasushi IYECHIKA

IPC: H01L21/67 ,  C23C16/52 ,  C23C16/34 ,  G01B11/16

Abstract: A warp measurement device includes: a light emitter that emits two optical signals having different polarization directions to an object to be measured; a light receiver that receives, at different timings, the two optical signals reflected on the object to be measured; a warp detector that detects a warp of the object to be measured based on locations where the two optical signals are received on the light receiver; and a light selector that is disposed in an optical path of the two optical signals, alternately selects the two optical signals, and guides the two optical signals into the optical path.

公开(公告)号：US20180224268A1

公开(公告)日：2018-08-09

申请号：US15947369

申请日：2018-04-06

Applicant: NuFlare Technology, Inc.

Inventor： Yasushi IYECHIKA

IPC: G01B11/06 ,  H01L21/02 ,  C23C16/455

CPC classification number: G01B11/0625 ,  C23C16/301 ,  C23C16/455 ,  C23C16/45565 ,  C23C16/52 ,  G01B11/0616 ,  H01L21/0237 ,  H01L21/02428 ,  H01L21/02439 ,  H01L21/02494 ,  H01L21/0262

Abstract: A vapor phase growth rate measuring apparatus has an initial parameter setting adjuster to set initial values of fitting parameters, a refractive index of each thin film to be formed on the substrate, a growth rate of each thin film, and at least one parameter having temperature dependence, a film thickness calculator to calculate a film thickness of each thin film, a parameter selector to select a value in accordance with a growth temperature for the parameter, a reflectometer to measure a reflectance of the substrate, a reflectance calculator to calculate a reflectance of the substrate, an error calculator to calculate an error between the calculated reflectance and an actual measurement value of the reflectance measured at a plurality of times, a parameter changer to change at least a part of the values of the fitting parameters, and an output value generator to generate characteristic values of each thin film.

公开(公告)号：US20180114715A1

公开(公告)日：2018-04-26

申请号：US15789654

申请日：2017-10-20

Applicant: NuFlare Technology, Inc.

Inventor： Yasushi IYECHIKA ,  Masayuki TSUKUI ,  Yoshitaka ISHIKAWA

IPC: H01L21/687 ,  H01L21/02 ,  H01L21/67 ,  C30B25/10 ,  C30B25/18 ,  C30B25/12 ,  C30B29/40 ,  C30B29/68

CPC classification number: H01L21/68735 ,  C30B25/10 ,  C30B25/12 ,  C30B25/18 ,  C30B29/403 ,  C30B29/406 ,  C30B29/68 ,  H01L21/02381 ,  H01L21/02433 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/67103 ,  H01L21/68764 ,  H01L33/007 ,  H01L33/06 ,  H01L33/12 ,  H01L33/32

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion having ring-shape and an inner portion having ring-shape, the inner portion including a substrate mounting surface positioned below an upper surface of the outer portion, the substrate mounting surface being a curved surface, the curved surface having convex regions and concave regions repeated in a circumferential direction, the curved surface having six-fold rotational symmetry, and a heater provided below the ring-shaped holder.

公开(公告)号：US20160282188A1

公开(公告)日：2016-09-29

申请号：US15071909

申请日：2016-03-16

Applicant: NuFlare Technology, Inc.

Inventor： Yasushi IYECHIKA ,  Masato AKITA

IPC: G01J5/10 ,  C23C16/44 ,  C23C16/52 ,  G01J5/08 ,  C23C16/455

CPC classification number: G01J5/10 ,  C23C16/4584 ,  C23C16/46 ,  C23C16/52 ,  G01J5/0896

Abstract: A film forming apparatus includes: a support, a rotator, a gas supplier, and a radiation thermometer configured to measure a temperature of a surface of a substrate, wherein the radiation thermometer includes: a light source of an irradiation light to be irradiated to the surface of the substrate; a first light receiver configured to receive a reflected light from a first measurement region at a predetermined distance from the rotation center on the surface of the substrate; and a second light receiver configured to receive a heat radiation light from a second measurement region extending in a rotation direction of the substrate at the predetermined distance from the rotation center on the surface of the substrate.

Abstract translation: 成膜装置包括：支撑体，旋转体，气体供给体，以及配置为测量基板的表面的温度的辐射温度计，其中，所述辐射温度计包括：照射到所述基板的照射光的光源， 基材表面; 第一光接收器，被配置为接收来自基板表面上的旋转中心预定距离的第一测量区域的反射光; 以及第二光接收器，被配置为从在基板的表面上的旋转中心预定距离处沿着基板的旋转方向延伸的第二测量区域接收热辐射光。

公开(公告)号：US20150276388A1

公开(公告)日：2015-10-01

申请号：US14670897

申请日：2015-03-27

Applicant: NuFlare Technology, Inc.

Inventor： Masato AKITA ,  Yasushi IYECHIKA

IPC: G01B11/24

CPC classification number: G01B11/24 ,  G01B11/16 ,  G01B11/255 ,  H01L21/67288 ,  H01L22/12

Abstract: A curvature measurement apparatus according to an embodiment includes: a laser beam emitting portion emitting a laser beam; a first polarization beam splitter separating the emitted laser beam into first and second laser beams in different polarization directions and in different travel directions; a mirror reflecting the first laser beam so that the first and second laser beams travel side by side to a substrate; a second polarization beam splitter transmitting the second laser beam mirror-reflected from the substrate and reflecting the first laser beam, mirror-reflected from the substrate, in a direction different from a travel direction of the second laser beam; a one-dimensional first position detection device detecting an incident position of the reflected first laser beam on the first position detection device; and a one-dimensional second position detection device detecting an incident position of the transmitted second laser beam on the second position detection device.

Abstract translation: 根据实施例的曲率测量装置包括：发射激光束的激光束发射部分; 第一偏振光束分离器，将发射的激光束分离成不同偏振方向和不同行进方向的第一和第二激光束; 反射第一激光束的镜子，使得第一和第二激光束并排行进到基底; 第二偏振分束器，透射从所述基板镜像反射的所述第二激光束，并且反射从所述基板反射的所述第一激光束沿与所述第二激光束的行进方向不同的方向; 一维第一位置检测装置，检测反射的第一激光束在第一位置检测装置上的入射位置; 以及检测所述第二激光束在所述第二位置检测装置上的入射位置的一维第二位置检测装置。

公开(公告)号：US20210310118A1

公开(公告)日：2021-10-07

申请号：US17351757

申请日：2021-06-18

Applicant: NuFlare Technology, Inc.

Inventor： Masayuki TSUKUI ,  Hajime NAGO ,  Yasushi IYECHIKA

IPC: C23C16/30 ,  C23C16/455 ,  C30B29/40 ,  H01L21/02 ,  C30B25/02 ,  C23C16/458

Abstract: Provided is a vapor phase growth method according to an embodiment including loading a first substrate into a reaction chamber, generating a first mixed gas by mixing an indium containing gas, an aluminum containing gas, and a nitrogen compound containing gas, and forming a first indium aluminum nitride film on the first substrate by supplying the first mixed gas into the reaction chamber, the first substrate being rotated at a first rotation speed of 300 rpm or more.

公开(公告)号：US20180292315A1

公开(公告)日：2018-10-11

申请号：US15946045

申请日：2018-04-05

Applicant: NuFlare Technology, Inc.

Inventor： Yasushi IYECHIKA

IPC: G01N21/41 ,  H01L21/67 ,  H01L21/66

Abstract: A growth-rate measuring apparatus has a refractometer to irradiate light of a plurality of different wavelengths to a surface of a substrate to measure a reflectivity of the surface of the substrate per different wavelengths, a fitter to fit a reflectivity calculated by a model function, the model function being obtained in advance, to a measured value of the reflectivity, for at least one layer of thin films laminated one by one on the substrate, with at least one of a refractive index and a growth rate as a fitting parameter, a parameter extractor to extract sets of fitting parameters for each wavelength in the different wavelengths, respectively, for which an error between the calculated reflectivity and the measured value of the reflectivity is minimum, and a parameter selector to select an optimum set of values of the fitting parameter, among the fitting parameters extracted for the different wavelengths.

公开(公告)号：US20180066381A1

公开(公告)日：2018-03-08

申请号：US15694306

申请日：2017-09-01

Applicant: NuFlare Technology, Inc.

Inventor： Yoshitaka ISHIKAWA ,  Takehiko KOBAYASHI ,  Hideshi TAKAHASHI ,  Yasushi IYECHIKA ,  Takashi HARAGUCHI ,  Kiyotaka MIYANO

IPC: C30B25/04 ,  H01L33/00 ,  C30B25/10 ,  C23C16/458

CPC classification number: C30B25/04 ,  C23C16/4584 ,  C23C16/4586 ,  C23C16/46 ,  C30B25/10 ,  H01L33/007 ,  H01L33/06

Abstract: A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.

公开(公告)号：US20180057938A1

公开(公告)日：2018-03-01

申请号：US15687839

申请日：2017-08-28

Applicant: NuFlare Technology, Inc.

Inventor： Hideshi TAKAHASHI ,  Yasushi IYECHIKA ,  Masayuki TSUKUI

IPC: C23C16/452 ,  H01L21/027

Abstract: A substrate W is placed on a support part 7 provided in a reaction chamber 2. While the substrate W is rotated together with the support part 7 around a rotation shaft A passing through a center of the substrate W at a rotating speed of 1300 rpm or more and 2000 rpm or less, a source gas including an organic metal is supplied onto the substrate W from a portion above the reaction chamber 2 to cause a III-V semiconductor layer to grow on the substrate W.

公开(公告)号：US20230357954A1

公开(公告)日：2023-11-09

申请号：US18301748

申请日：2023-04-17

Applicant: NuFlare Technology, Inc.

Inventor： Masayuki TSUKUI ,  Yasushi IYECHIKA ,  Kiyotaka MIYANO ,  Yoshitaka ISHIKAWA

IPC: C30B25/10 ,  C23C16/46

CPC classification number: C30B25/10 ,  C23C16/46 ,  H01L33/007

Abstract: A vapor phase growth apparatus of embodiments includes: a reactor; a holder provided in the reactor to place a substrate thereon; an annular out-heater provided below the holder; an in-heater provided below the out-heater; a disk-shaped upper reflector provided below the in-heater and formed of pyrolytic graphite; and a disk-shaped lower reflector provided below the upper reflector, formed of silicon carbide, and having a thickness smaller than that of the upper reflector.