公开(公告)号：US20170098597A1

公开(公告)日：2017-04-06

申请号：US15383521

申请日：2016-12-19

Applicant: NXP USA, Inc.

Inventor： AKHILESH K. SINGH ,  RAMA I. HEGDE ,  NISHANT LAKHERA

IPC: H01L23/495 ,  H01L21/56 ,  H01L25/065 ,  H01L23/00 ,  H01L23/31

CPC classification number: H01L23/49541 ,  H01L21/4828 ,  H01L21/561 ,  H01L21/563 ,  H01L23/3107 ,  H01L23/3135 ,  H01L23/3142 ,  H01L23/49503 ,  H01L23/49513 ,  H01L23/49575 ,  H01L24/11 ,  H01L24/13 ,  H01L24/16 ,  H01L24/27 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/81 ,  H01L24/83 ,  H01L24/85 ,  H01L24/92 ,  H01L24/96 ,  H01L24/97 ,  H01L25/0655 ,  H01L2224/11334 ,  H01L2224/11436 ,  H01L2224/1161 ,  H01L2224/119 ,  H01L2224/13005 ,  H01L2224/13082 ,  H01L2224/131 ,  H01L2224/1319 ,  H01L2224/1329 ,  H01L2224/13294 ,  H01L2224/133 ,  H01L2224/16245 ,  H01L2224/27334 ,  H01L2224/27436 ,  H01L2224/2761 ,  H01L2224/291 ,  H01L2224/2919 ,  H01L2224/2929 ,  H01L2224/29294 ,  H01L2224/293 ,  H01L2224/30131 ,  H01L2224/3201 ,  H01L2224/32014 ,  H01L2224/32245 ,  H01L2224/32257 ,  H01L2224/32258 ,  H01L2224/3301 ,  H01L2224/33505 ,  H01L2224/48091 ,  H01L2224/48106 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48471 ,  H01L2224/73204 ,  H01L2224/73257 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/81201 ,  H01L2224/81447 ,  H01L2224/81455 ,  H01L2224/81801 ,  H01L2224/8185 ,  H01L2224/83104 ,  H01L2224/83192 ,  H01L2224/83201 ,  H01L2224/83385 ,  H01L2224/83447 ,  H01L2224/83455 ,  H01L2224/83801 ,  H01L2224/8385 ,  H01L2224/83851 ,  H01L2224/83907 ,  H01L2224/85205 ,  H01L2224/85207 ,  H01L2224/92 ,  H01L2224/9205 ,  H01L2224/9222 ,  H01L2224/92227 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01026 ,  H01L2924/01028 ,  H01L2924/1715 ,  H01L2924/17747 ,  H01L2924/181 ,  H01L2924/00012 ,  H01L2924/00 ,  H01L2224/83 ,  H01L2224/85 ,  H01L2924/0665 ,  H01L2924/014 ,  H01L2924/0782 ,  H01L2224/81 ,  H01L2224/114 ,  H01L2924/0781 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

Abstract: A method for forming a packaged semiconductor device includes attaching a first major surface of a semiconductor die to a plurality of protrusions extending from a package substrate. A top surface of each protrusion has a die attach material, and the plurality of protrusions define an open region between the first major surface of the semiconductor die and the package substrate. Interconnects are formed between a second major surface of the semiconductor die and the package substrate in which the second major surface opposite the first major surface. An encapsulant material is formed over the semiconductor die and the interconnects.

公开(公告)号：US20180204923A1

公开(公告)日：2018-07-19

申请号：US15409639

申请日：2017-01-19

Applicant: NXP USA, INC.

Inventor： RAMA I. HEGDE

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/51 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8234

CPC classification number: H01L29/42364 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/42376 ,  H01L29/517

Abstract: A method of forming a semiconductor device (100) includes depositing a metal oxide (104) over the substrate (102). The depositing includes combining a first metal and oxygen to form the metal oxide having grains and further adding a catalyst during the combining. The catalyst causes the grains to be bigger than would occur in the absence of the catalyst. A conductive layer (202) is formed over the metal oxide.

公开(公告)号：US20180315824A9

公开(公告)日：2018-11-01

申请号：US15409639

申请日：2017-01-19

Applicant: NXP USA, INC.

Inventor： RAMA I. HEGDE

IPC: H01L29/423 ,  H01L27/088 ,  H01L29/51 ,  H01L21/02 ,  H01L21/285 ,  H01L21/8234

CPC classification number: H01L29/42364 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/28194 ,  H01L21/823462 ,  H01L27/088 ,  H01L29/42376 ,  H01L29/517

Abstract: A method of forming a semiconductor device (100) includes depositing a metal oxide (104) over the substrate (102). The depositing includes combining a first metal and oxygen to form the metal oxide having grains and further adding a catalyst during the combining. The catalyst causes the grains to be bigger than would occur in the absence of the catalyst. A conductive layer (202) is formed over the metal oxide.