公开(公告)号：US20140027823A1

公开(公告)日：2014-01-30

申请号：US13735551

申请日：2013-01-07

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Yao-Jen Lee ,  Fu-Kuo Hsueh ,  Po-Jung Sung ,  Da-Wei Heh ,  Fu-Ju Hou ,  Chih-Hung Lo ,  Hsiu-Chih Chen

IPC: H01L29/40

CPC classification number: H01L29/401 ,  H01L21/28052 ,  H01L21/28255 ,  H01L21/28264 ,  H01L21/28518 ,  H01L21/324 ,  H01L29/40 ,  H01L29/665

Abstract: A method for forming a metal compound film includes: providing a substrate structure; forming a first metal layer on the substrate structure; performing a first microwave annealing process to conduct a reaction between the first metal layer and the substrate structure so as to form a first polycrystalline film of a metal compound; and performing a second microwave annealing process to transform the first polycrystalline film into a second polycrystalline film of the metal compound with an enlarged grain size, wherein a microwave power output used in the second microwave annealing process is higher than that used in the first microwave annealing process.

Abstract translation: 金属化合物膜的形成方法包括：提供基板结构; 在所述基板结构上形成第一金属层; 进行第一微波退火处理以在第一金属层和基板结构之间进行反应，以形成金属化合物的第一多晶膜; 并且进行第二微波退火处理，以使第一微晶退火工艺中使用的微波功率输出高于第一微波退火中使用的微波功率输出，将第一多晶膜转变为具有扩大晶粒尺寸的金属化合物的第二多晶膜 处理。

公开(公告)号：US20140374834A1

公开(公告)日：2014-12-25

申请号：US13922354

申请日：2013-06-20

Applicant: National Applied Research Laboratories

Inventor： Guang-Li Luo ,  Chee-Wee Liu ,  Shu-Han Hsu ,  Chun-Lin Chu ,  Chih-Hung Lo

IPC: H01L27/092

CPC classification number: H01L27/0924 ,  H01L21/02381 ,  H01L21/02532 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/785 ,  Y10T428/12528

Abstract: A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices.

Abstract translation: 锗（Ge）结构包括基底，Ge层和至少Ge空间结构。 Ge层形成在基板上，Ge层的表面是Ge {110}晶格面。 Ge空间结构形成在Ge层中并且包括顶表面和侧壁表面，其中顶表面是Ge {110}晶格平面，并且侧壁表面垂直于顶表面。 在侧壁表面和顶表面的接合处形成轴线，并且轴的宽大方向平行于Ge层表面上的Ge [112]晶格矢量，因此侧壁表面是Ge {111 }晶格面。 由于Ge {111}表面通道具有非常高的电子迁移率，所以该Ge空间结构可用于制造高性能Ge半导体器件。

公开(公告)号：US20140094023A1

公开(公告)日：2014-04-03

申请号：US13799957

申请日：2013-03-13

Applicant: NATIONAL APPLIED RESEARCH LABORATORIES

Inventor： Yao-Jen Lee ,  Po-Jung Sung ,  Da-Wei Heh ,  Fu-Ju Hou ,  Chih-Hung Lo ,  Fu-Kuo Hsueh ,  Hsiu-Chih Chen

IPC: H01L21/20

CPC classification number: H01L21/2022 ,  H01L21/28518

Abstract: A fabricating method of a semiconductor chip includes the following steps. Firstly, a substrate is provided, wherein an amorphous semiconductor layer is formed in a first surface of the substrate. Then, a first metal layer is formed on the amorphous semiconductor layer. Then, a thermal-treating process is performed to result in a chemical reaction between the first metal layer and a part of the amorphous semiconductor layer, thereby producing an amorphous metal semiconductor compound layer. Afterwards, a microwave annealing process is performed to recrystallize the amorphous metal semiconductor compound layer as a polycrystalline metal semiconductor compound layer.

Abstract translation: 半导体芯片的制造方法包括以下步骤。 首先，提供衬底，其中在衬底的第一表面中形成非晶半导体层。 然后，在非晶半导体层上形成第一金属层。 然后，进行热处理工序，导致第一金属层与非晶半导体层的一部分之间发生化学反应，由此生成非晶金属半导体化合物层。 之后，进行微波退火处理，使作为多晶金属半导体化合物层的非晶质金属半导体化合物层再结晶。