公开(公告)号：US09105481B2

公开(公告)日：2015-08-11

申请号：US14010713

申请日：2013-08-27

Applicant: National Applied Research Laboratories

Inventor： Chee-Wee Liu ,  Yen-Ting Chen

IPC: H01L29/04 ,  H01L29/165 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L21/84 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/045 ,  H01L21/84 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface.

Abstract translation: 提供半导体结构。 半导体结构包括至少第一N型锗（Ge）结构和至少第一P型Ge结构的衬底。 第一N型Ge结构形成在基板上，并且具有两个端部和至少一个结合在其两个端部之间的第一中心部分。 第一中心部分浮在基板上，第一中心部分的侧表面是{111} Ge晶体表面。 第一P型Ge结构形成在基板上，并且具有两个端部和至少两个结合在其两个端部之间的第二中心部分。 第二中心部分的侧表面是{110} Ge晶体表面。

公开(公告)号：US08975674B2

公开(公告)日：2015-03-10

申请号：US13672971

申请日：2012-11-09

Applicant: National Applied Research Laboratories

Inventor： Chun-Lin Chu ,  Shu-Han Hsu ,  Guang-Li Luo ,  Chee-Wee Liu

IPC: H01L27/088 ,  H01L29/12 ,  H01L29/267 ,  B82Y10/00 ,  H01L29/06 ,  H01L29/66 ,  H01L29/775 ,  H01L29/32 ,  H01L29/49 ,  H01L29/51

CPC classification number: H01L29/0673 ,  B82Y10/00 ,  H01L29/32 ,  H01L29/42392 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A bridge structure for use in a semiconductor device includes a semiconductor substrate and a semiconductor structure layer. The semiconductor structure layer is formed on a surface of the semiconductor substrate and a lattice difference is formed between the semiconductor structure layer and the semiconductor substrate. The semiconductor structure layer includes at least a first block, at least a second block and at least a third block, wherein the first block and the third block are bonded on the surface of the semiconductor substrate, the second block is floated over the semiconductor substrate and connected with the first block and the third block.

Abstract translation: 用于半导体器件的桥结构包括半导体衬底和半导体结构层。 半导体结构层形成在半导体衬底的表面上，并且在半导体结构层和半导体衬底之间形成晶格差。 半导体结构层至少包括第一块，至少第二块和至少第三块，其中第一块和第三块结合在半导体衬底的表面上，第二块浮在半导体衬底上 并与第一块和第三块连接。

公开(公告)号：US20140374834A1

公开(公告)日：2014-12-25

申请号：US13922354

申请日：2013-06-20

Applicant: National Applied Research Laboratories

Inventor： Guang-Li Luo ,  Chee-Wee Liu ,  Shu-Han Hsu ,  Chun-Lin Chu ,  Chih-Hung Lo

IPC: H01L27/092

CPC classification number: H01L27/0924 ,  H01L21/02381 ,  H01L21/02532 ,  H01L29/1054 ,  H01L29/66795 ,  H01L29/785 ,  Y10T428/12528

Abstract: A germanium (Ge) structure includes a substrate, a Ge layer and at least a Ge spatial structure. The Ge layer is formed on the substrate, and a surface of the Ge layer is a Ge {110} lattice plane. The Ge spatial structure is formed in the Ge layer and includes a top surface and a sidewall surface, wherein the top surface is a Ge {110} lattice plane and the sidewall surface is perpendicular to the top surface. An axis is formed at a junction of the sidewall surface and the top surface, and an extensive direction of the axis is parallel to a Ge [112] lattice vector on the surface of the Ge layer, therefore the sidewall surface is a Ge {111} lattice plane. Because Ge {111} surface channels have very high electron mobility, this Ge spatial structure may be applied for fabricating high-performance Ge semiconductor devices.

Abstract translation: 锗（Ge）结构包括基底，Ge层和至少Ge空间结构。 Ge层形成在基板上，Ge层的表面是Ge {110}晶格面。 Ge空间结构形成在Ge层中并且包括顶表面和侧壁表面，其中顶表面是Ge {110}晶格平面，并且侧壁表面垂直于顶表面。 在侧壁表面和顶表面的接合处形成轴线，并且轴的宽大方向平行于Ge层表面上的Ge [112]晶格矢量，因此侧壁表面是Ge {111 }晶格面。 由于Ge {111}表面通道具有非常高的电子迁移率，所以该Ge空间结构可用于制造高性能Ge半导体器件。

公开(公告)号：US20140264439A1

公开(公告)日：2014-09-18

申请号：US14010713

申请日：2013-08-27

Applicant: National Applied Research Laboratories

Inventor： Chee-Wee Liu ,  Yen-Ting Chen

IPC: H01L29/04 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/045 ,  H01L21/84 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface.

Abstract translation: 提供半导体结构。 半导体结构包括至少第一N型锗（Ge）结构和至少第一P型Ge结构的衬底。 第一N型Ge结构形成在基板上，并且具有两个端部和至少一个结合在其两个端部之间的第一中心部分。 第一中心部分浮在基板上，第一中心部分的侧表面是{111} Ge晶体表面。 第一P型Ge结构形成在基板上，并且具有两个端部和至少两个结合在其两个端部之间的第二中心部分。 第二中心部分的侧表面是{110} Ge晶体表面。