公开(公告)号：US20140264439A1

公开(公告)日：2014-09-18

申请号：US14010713

申请日：2013-08-27

Applicant: National Applied Research Laboratories

Inventor： Chee-Wee Liu ,  Yen-Ting Chen

IPC: H01L29/04 ,  H01L29/78 ,  H01L29/165

CPC classification number: H01L29/045 ,  H01L21/84 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface.

Abstract translation: 提供半导体结构。 半导体结构包括至少第一N型锗（Ge）结构和至少第一P型Ge结构的衬底。 第一N型Ge结构形成在基板上，并且具有两个端部和至少一个结合在其两个端部之间的第一中心部分。 第一中心部分浮在基板上，第一中心部分的侧表面是{111} Ge晶体表面。 第一P型Ge结构形成在基板上，并且具有两个端部和至少两个结合在其两个端部之间的第二中心部分。 第二中心部分的侧表面是{110} Ge晶体表面。

公开(公告)号：US09105481B2

公开(公告)日：2015-08-11

申请号：US14010713

申请日：2013-08-27

Applicant: National Applied Research Laboratories

Inventor： Chee-Wee Liu ,  Yen-Ting Chen

IPC: H01L29/04 ,  H01L29/165 ,  H01L29/66 ,  H01L29/775 ,  H01L29/06 ,  H01L21/84 ,  H01L29/423 ,  H01L29/786

CPC classification number: H01L29/045 ,  H01L21/84 ,  H01L29/0673 ,  H01L29/165 ,  H01L29/42392 ,  H01L29/66439 ,  H01L29/775 ,  H01L29/78696

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, at least a first N-type germanium (Ge) structure and at least a first P-type Ge structure. The first N-type Ge structure is formed on the substrate and has two end parts and at least a first central part bonded between the two end parts thereof. The first central part is floated over the substrate, and a side surface of the first central part is a {111} Ge crystallographic surface. The first P-type Ge structure is formed on the substrate and has two end parts and at least a second central part bonded between the two end parts thereof. The side surface of the second central part is a {110} Ge crystallographic surface.

Abstract translation: 提供半导体结构。 半导体结构包括至少第一N型锗（Ge）结构和至少第一P型Ge结构的衬底。 第一N型Ge结构形成在基板上，并且具有两个端部和至少一个结合在其两个端部之间的第一中心部分。 第一中心部分浮在基板上，第一中心部分的侧表面是{111} Ge晶体表面。 第一P型Ge结构形成在基板上，并且具有两个端部和至少两个结合在其两个端部之间的第二中心部分。 第二中心部分的侧表面是{110} Ge晶体表面。