POWER SUBSTRATE AND HIGH-VOLTAGE MODULE EQUIPPED WITH SAME

    公开(公告)号:US20220174811A1

    公开(公告)日:2022-06-02

    申请号:US17442404

    申请日:2020-03-26

    Abstract: A power substrate (101) of the present invention includes a plurality of insulating substrates (106) arranged side by side along a plurality of current paths (P) extending in the same direction, a plurality of MOS transistors (108) mounted on one major surface of each of the plurality of insulating substrates (106) with a first conductive layer (107) and a first solder bonding layer (109) in between, and a heat dissipation member (110) in contact with other major surfaces of all of the insulating substrates with a second conductive layer (107) and a second solder bonding layer (109) in between, and each of the current paths (P) is formed by connecting one or more of the MOS transistors (108) mounted on one of the insulating substrates (106) with one or more of the MOS transistors (108) mounted on a different one of the insulating substrates (106) in series with each other.

    DC CIRCUIT BREAKER
    2.
    发明公开
    DC CIRCUIT BREAKER 审中-公开

    公开(公告)号:US20240355562A1

    公开(公告)日:2024-10-24

    申请号:US18721801

    申请日:2023-01-16

    CPC classification number: H01H33/596 H02H3/087

    Abstract: A DC circuit breaker 25a includes: a parallel connection part formed of a mechanical switch 40 and a semiconductor switch 44; and a switch control unit 39 which is connected in series to one side of the parallel connection part. The switch control unit 39 detects a main current value i separately from an external equipment-side breaking control device 12, and, when the main current value i is greater than or equal to a threshold α, the switch control unit 39 initiates a breaking operation without having to wait for a tripping signal from the equipment-side breaking control device 12. In this 10 breaking operation, the mechanical switch 40 is switched from on to off after the semiconductor switch 44 has been switched from off to on.

Patent Agency Ranking