公开(公告)号：US10572990B2

公开(公告)日：2020-02-25

申请号：US15482243

申请日：2017-04-07

Applicant: NuFlare Technology, Inc.

Inventor： Shusuke Yoshitake ,  Manabu Isobe ,  Thomas Scheruebl ,  Dirk Beyer ,  Sven Heisig

IPC: G03F1/42 ,  G06T7/00 ,  G06T7/12 ,  G06T7/73 ,  G03F1/70 ,  G03F1/72 ,  G03F1/84 ,  G03F7/20 ,  H01L21/027 ,  H01L21/67

Abstract: A pattern inspection apparatus includes: an optical image acquiring mechanism to acquire optical image data of a corresponding divided pattern for each of masks for multiple patterning has been formed; a position deviation map generating processing circuitry to generate position deviation maps regarding the corresponding divided pattern; a difference position value map generating processing circuitry to generate one difference position value map defining a difference value between relative position deviation amounts of the each minimum element of the position deviation maps; a region specifying processing circuitry to specify at least one region having the difference value exceeding a threshold of distance between patterns laying side-by-side by using the difference position value map; and an output mechanism to output at least coordinates, a type of defect, and information of a reference image of each region specified for the each region specified.

公开(公告)号：US11475557B2

公开(公告)日：2022-10-18

申请号：US16879897

申请日：2020-05-21

Applicant: NuFlare Technology, Inc.

Inventor： Shusuke Yoshitake

IPC: G06T7/00 ,  H01J37/28 ,  G03F7/20

Abstract: A mask inspection apparatus includes an image acquisition mechanism that acquires an optical image of the pattern by making an inspection light incident on an EUV mask and detecting a reflection inspection light reflected from the EUV mask, in a state where the relation between the incident direction of the inspection light used for inspecting the pattern formed on the EUV mask, and the arrangement direction of the EUV mask serving as the inspection substrate is matched with the relation between the incident direction of the EUV light on the EUV mask, and the arrangement direction of the EUV mask in the EUV exposure apparatus.