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公开(公告)号：US10115918B2
公开(公告)日：2018-10-30
申请号：US15523500
申请日：2015-11-05
Inventor： Yabing Qi , Min-Cherl Jung , Sonia Ruiz Raga
Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
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公开(公告)号：US20180294106A1
公开(公告)日：2018-10-11
申请号：US15574006
申请日：2016-05-16
Inventor： Yabing Qi , Sonia Ruiz Raga
CPC classification number: H01G9/2009 , H01G9/0036 , H01L51/0007 , H01L51/0008 , H01L51/0028 , H01L51/005 , H01L51/0077 , H01L51/4226 , H01L51/4253 , Y02E10/549 , Y02P70/521
Abstract: A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CH3NH2) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CH3NH2) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially or simultaneously.
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公开(公告)号：US20170338430A1
公开(公告)日：2017-11-23
申请号：US15523500
申请日：2015-11-05
Inventor： Yabing Qi , Min-Cherl Jung , Sonia Ruiz Raga
CPC classification number: H01L51/4246 , H01L51/001 , H01L51/002 , H01L51/0083 , H01L51/4226 , H01L51/4293 , Y02E10/549 , Y02P70/521
Abstract: An optoelectronic device is provided, the p-doped HTL device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
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公开(公告)号：US10790096B2
公开(公告)日：2020-09-29
申请号：US15752947
申请日：2016-09-07
Inventor： Yabing Qi , Min-cherl Jung , Sonia Ruiz Raga
Abstract: A method of forming a Pb-free perovskite film is provided, the method based on vacuum evaporation and comprising: first depositing a first material comprising Sn halide on a substrate to form a first layer; second depositing a second material comprising organic halide to form a second layer on the first layer to obtain a sequentially-deposited two-layer film on the substrate; and annealing the sequentially-deposited two-layer film on the substrate. During the annealing, the first and second materials inter-diffuse and react to form the Pb-free perovskite film. The second layer is formed to cover the first layer so as to prevent the first layer from air exposure. The solar cell device including the Pb-free perovskite film formed by using the present method exhibits good stability.
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公开(公告)号：US10084145B2
公开(公告)日：2018-09-25
申请号：US15523500
申请日：2015-11-05
Inventor： Yabing Qi , Min-Cherl Jung , Sonia Ruiz Raga
Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
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Patent Agency Ranking
公开(公告)号：US20180247769A1
公开(公告)日：2018-08-30
申请号：US15752947
申请日：2016-09-07
Inventor： Yabing Qi , Min-cherl Jung , Sonia Ruiz Raga
Abstract: A method of forming a Pb-free perovskite film is provided, the method based on vacuum evaporation and comprising: first depositing a first material comprising Sn halide on a substrate to form a first layer; second depositing a second material comprising organic halide to form a second layer on the first layer to obtain a sequentially-deposited two-layer film on the substrate; and annealing the sequentially-deposited two-layer film on the substrate. During the annealing, the first and second materials inter-diffuse and react to form the Pb-free perovskite film. The second layer is formed to cover the first layer so as to prevent the first layer from air exposure. The solar cell device including the Pb-free perovskite film formed by using the present method exhibits good stability.
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7.发明授权公开(公告)号：US10797640B2
公开(公告)日：2020-10-06
申请号：US16306713
申请日：2017-05-29
Inventor： Yabing Qi , Luis Katsuya Ono , Mikas Remeika , Sonia Ruiz Raga
Abstract: A system and method for assessing performance of a plurality of perovskite optoelectronic devices are disclosed. The system comprises a chamber, a light source, a switch board for allowing selection of a device among a plurality of devices in the chamber for measurement; a DC voltage supply for applying voltage to the device, a source/measure unit (SMU) for measuring current of the device; and a computer implemented with a software program including computer executable instructions to control at least the SMU, the DC voltage supply, the switch board, and the light source. The computer-implemented method for the performance assessment by using the system includes obtaining at least one of first current-versus-voltage (I-V) data according to a first procedure and second I-V data according to a second procedure for analyzing hysteresis behavior of the device.
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公开(公告)号：US10283278B2
公开(公告)日：2019-05-07
申请号：US15574006
申请日：2016-05-16
Inventor： Yabing Qi , Sonia Ruiz Raga
Abstract: A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CH3NH2) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CH3NH2) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially or simultaneously.
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9.发明申请公开(公告)号：US20190131926A1
公开(公告)日：2019-05-02
申请号：US16306713
申请日：2017-05-29
Inventor： Yabing Qi , Luis Katsuya Ono , Mikas Remeika , Sonia Ruiz Raga
Abstract: A system and method for assessing performance of a plurality of perovskite optoelectronic devices are disclosed. The system comprises a chamber, a light source, a switch board for allowing selection of a device among a plurality of devices in the chamber for measurement; a DC voltage supply for applying voltage to the device, a source/measure unit (SMU) for measuring current of the device; and a computer implemented with a software program including computer executable instructions to control at least the SMU, the DC voltage supply, the switch board, and the light source. The computer-implemented method for the performance assessment by using the system includes obtaining at least one of first current-versus-voltage (I-V) data according to a first procedure and second I-V data according to a second procedure for analyzing hysteresis behavior of the device.
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公开(公告)号：US20180114648A1
公开(公告)日：2018-04-26
申请号：US15567282
申请日：2016-05-06
Inventor： Yabing Qi , Sonia Ruiz Raga , Luis Katsuya Ono
Abstract: A method of fabricating a perovskite-based optoelectronic device is provided, the method comprising: forming an active layer comprising organometal halide perovskite; making a solution comprising a hole transport material (HTM) and a solvent, the solvent having a boiling point lower than that of chlorobenzene; and forming a hole transport layer (HTL) by spin-coating the solution on the active layer. The solvents having a boiling point lower than that of chlorobenzene include chloroform and dichloromethane.
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