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公开(公告)号：US20190105812A1
公开(公告)日：2019-04-11
申请号：US16099493
申请日：2017-06-01
Inventor： Yabing Qi , Luis Katsuya Ono
Abstract: A method of nanoscale patterning is disclosed. The method comprises: mixing predetermined amounts of a first solvent and a second solvent to generate a solvent, the first solvent and the second solvent being immiscible with each other; dissolving a solute material in the solvent to generate a coating material, the solute material having solubility that is higher in the first solvent than in the second solvent; and applying the coating material onto a substrate to form a plurality of pinholes in the coating material. The formation of the plurality of pinholes is associated with suspension drops mostly comprised of the second solvent, separated from the solute material dissolved in the first solvent, in the coating material. A method of making a stamp with a nanoscale pattern is also disclosed based on the above method.
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公开(公告)号：US10115918B2
公开(公告)日：2018-10-30
申请号：US15523500
申请日：2015-11-05
Inventor： Yabing Qi , Min-Cherl Jung , Sonia Ruiz Raga
Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
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公开(公告)号：US10975498B2
公开(公告)日：2021-04-13
申请号：US15503780
申请日：2015-08-17
Inventor： Yabing Qi , Matthew Ryan Leyden
IPC: C30B31/16 , C23C16/448 , H01L33/00 , H01L33/26 , C23C16/30 , C30B25/02 , C30B29/12 , C30B25/00 , C30B31/12 , C23C16/52 , C30B29/54 , H01L51/00 , H01L51/42 , H01G9/20 , H01L51/50
Abstract: A system and method for fabricating a perovskite film is provided, the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units, respectively. The first and second sections correspond substantially to the upstream and downstream of gases, respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit, and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre-deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.
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公开(公告)号：US20170338430A1
公开(公告)日：2017-11-23
申请号：US15523500
申请日：2015-11-05
Inventor： Yabing Qi , Min-Cherl Jung , Sonia Ruiz Raga
CPC classification number: H01L51/4246 , H01L51/001 , H01L51/002 , H01L51/0083 , H01L51/4226 , H01L51/4293 , Y02E10/549 , Y02P70/521
Abstract: An optoelectronic device is provided, the p-doped HTL device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
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公开(公告)号：US11447858B2
公开(公告)日：2022-09-20
申请号：US16230095
申请日：2018-12-21
Inventor： Yabing Qi , Luis Katsuya Ono , Shenghao Wang
Abstract: A system and method for fabricating perovskite films for solar cell applications are provided, the system including a housing for use as a vacuum chamber, a substrate stage coupled to the top section of the housing; a first evaporator unit coupled to the bottom section of the housing and configured to generate BX2 (metal halide material) vapor; a second evaporator unit coupled to the housing and configured to generate AX (organic material) vapor; and a flow control unit coupled to the housing for controlling circulation of the AX vapor. The dimensions of the horizontal cross-sectional shape of the first evaporator unit, the dimensions of the horizontal cross-sectional shape of the substrate stage, and the relative position in the horizontal direction between the two horizontal cross-sectional shapes are configured to maximize the overlap between the two horizontal cross-sectional shapes.
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Patent Agency Ranking
公开(公告)号：US20180294106A1
公开(公告)日：2018-10-11
申请号：US15574006
申请日：2016-05-16
Inventor： Yabing Qi , Sonia Ruiz Raga
CPC classification number: H01G9/2009 , H01G9/0036 , H01L51/0007 , H01L51/0008 , H01L51/0028 , H01L51/005 , H01L51/0077 , H01L51/4226 , H01L51/4253 , Y02E10/549 , Y02P70/521
Abstract: A method of forming a perovskite film is provided, the method comprising inducing a chemical reaction between a metal halide compound and methylamine (CH3NH2) gas. Specifically, the method includes: forming a metal halide film on a substrate; and exposing the metal halide film to the methylamine (CH3NH2) gas for inducing the chemical reaction between the metal halide compound and the methylamine (CH3NH2) gas to form a perovskite film. Post treatments can be carried out by adding a step of exposing the perovskite film to hydriodic acid (HI) gas and methylamine (CH3NH2) gas sequentially or simultaneously.
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公开(公告)号：US11293101B2
公开(公告)日：2022-04-05
申请号：US16357837
申请日：2019-03-19
Inventor： Yabing Qi , Luis Ono , Shenghao Wang
IPC: C23C14/08 , C23C14/24 , C23C16/52 , C23C14/06 , C23C14/12 , C23C14/50 , C23C14/54 , C23C16/40 , C23C16/455 , C23C16/46 , H01L31/0256 , H01L51/00 , H01L51/42 , C07F7/22 , C07F7/24
Abstract: A method for fabricating a perovskite film includes the steps of: placing a substrate on a substrate stage in a chamber, the substrate stage configured to rotate around its central axis at a rotation speed; depositing first source materials on the substrate from a first set of evaporation units, each coupled to the side section or the bottom section of the chamber; depositing second source materials on the substrate from a second set of evaporation units coupled to the bottom section, wherein the chamber includes a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The perovskite film includes multiple unit layers each being formed by one rotation of the substrate stage, and having composition and thickness thereof controlled by adjusting evaporation rates, rotation speed and horizontal cross-sectional areas.
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公开(公告)号：US10790096B2
公开(公告)日：2020-09-29
申请号：US15752947
申请日：2016-09-07
Inventor： Yabing Qi , Min-cherl Jung , Sonia Ruiz Raga
Abstract: A method of forming a Pb-free perovskite film is provided, the method based on vacuum evaporation and comprising: first depositing a first material comprising Sn halide on a substrate to form a first layer; second depositing a second material comprising organic halide to form a second layer on the first layer to obtain a sequentially-deposited two-layer film on the substrate; and annealing the sequentially-deposited two-layer film on the substrate. During the annealing, the first and second materials inter-diffuse and react to form the Pb-free perovskite film. The second layer is formed to cover the first layer so as to prevent the first layer from air exposure. The solar cell device including the Pb-free perovskite film formed by using the present method exhibits good stability.
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公开(公告)号：US20190211453A1
公开(公告)日：2019-07-11
申请号：US16357837
申请日：2019-03-19
Inventor： Yabing Qi , Luis Ono , Shenghao Wang
IPC: C23C16/52 , C23C14/54 , C23C16/46 , C23C14/06 , C23C14/12 , C23C14/24 , C23C14/50 , C23C16/455 , C23C16/40 , H01L31/0256
Abstract: A system and method for fabricating a perovskite film is provided, the system including a substrate stage configured to rotate around its central axis at a rotation speed, a first set of evaporation units, each coupled to the side section or the bottom section of the chamber, a second set of evaporation units coupled to the bottom section, and a shield defining two or more zones having respective horizontal cross-sectional areas, which are open and facing the substrate, designated for the two or more evaporation units in the second set. The resultant perovskite film includes multiple unit layers, wherein each unit layer is formed by one rotation of the substrate stage, and the composition and thickness of the unit layer are controlled by adjusting at least the evaporation rates, the rotation speed and the horizontal cross-sectional areas.
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公开(公告)号：US10084145B2
公开(公告)日：2018-09-25
申请号：US15523500
申请日：2015-11-05
Inventor： Yabing Qi , Min-Cherl Jung , Sonia Ruiz Raga
Abstract: An optoelectronic device is provided, the device comprising an active layer comprising organometal halide perovskite and a hole transport layer (HTL) formed by vacuum evaporation and configured to transport hole carriers. The HTL includes a first sublayer comprising a hole transport material (HTM) doped with an n-dopant and disposed adjacent to the active layer, a second sublayer comprising the HTM that is undoped and disposed adjacent to the first sublayer, and a third sublayer comprising the HTM doped with a p-dopant and disposed adjacent to the second sublayer. The doping concentration of the n-dopant for the n-doped sublayer is determined to match the highest occupied molecular orbital energy level of the n-doped sublayer with the valence band maximum energy level of the perovskite active layer.
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