公开(公告)号：US12134146B2

公开(公告)日：2024-11-05

申请号：US17812352

申请日：2022-07-13

Applicant: OSAKA UNIVERSITY

Inventor： Katsuaki Suganuma ,  Chuantong Chen ,  Toshiyuki Ishina ,  Seungjun Noh ,  Chanyang Choe

IPC: B23K35/00 ,  B23K35/30 ,  B32B15/01 ,  H01L23/00

Abstract: A bonding member (10) includes surface-processed silver surfaces (11a, 11b).

公开(公告)号：US12094850B2

公开(公告)日：2024-09-17

申请号：US17595826

申请日：2020-05-28

Applicant: OSAKA UNIVERSITY

Inventor： Katsuaki Suganuma ,  Chuantong Chen ,  Zheng Zhang

IPC: H01L23/00

CPC classification number: H01L24/83 ,  H01L24/29 ,  H01L24/32 ,  H01L2224/29339 ,  H01L2224/29394 ,  H01L2224/29499 ,  H01L2224/32227 ,  H01L2224/83192 ,  H01L2224/83395 ,  H01L2224/83487 ,  H01L2224/8384 ,  H01L2924/05432

Abstract: A bonding structure production method for producing a bonding structure (100) includes at least bonding a semiconductor element (30) and a substrate (10) using a silver paste. The substrate (10) includes a die attachment portion (12) to which the semiconductor element (30) is to be bonded. The die attachment portion (12) includes an alumina layer (16) serving as a surface layer on a bonding side of the die attachment portion (12) to which the semiconductor element (30) is to be bonded. The silver paste contains a solvent and silver particles with a residual strain measured by X-ray diffractometry of at least 5.0%. Preferably, the silver particles have a volume-based 50% cumulative diameter of at least 100 nm and no greater than 50 μm.