公开(公告)号：US20140230848A1

公开(公告)日：2014-08-21

申请号：US14261005

申请日：2014-04-24

Applicant: OSAKA UNIVERSITY ,  HOYA CORPORATION

Inventor： Kazuto YAMAUCHI ,  Tsutomu SHOKI ,  Takeyuki YAMADA

IPC: H01L21/02

CPC classification number: H01L21/02052 ,  B08B3/02 ,  B24C1/04 ,  B24C7/0007 ,  G03F1/82 ,  H01L21/67051 ,  H01L21/67057

Abstract: The present invention is a method of cleaning a substrate, comprising cleaning at least one surface of a substrate located in a liquid by injecting pressurized cleaning liquid containing bubbles or cleaning particles from a injection nozzle to at least one surface of the substrate.

Abstract translation: 本发明是一种清洗基材的方法，包括通过将含有气泡或清洁颗粒的加压清洗液从注射喷嘴注入基材的至少一个表面来清洗位于液体中的基材的至少一个表面。

公开(公告)号：US20170098559A1

公开(公告)日：2017-04-06

申请号：US15315864

申请日：2015-12-28

Applicant: TOHO ENGINEERING CO., LTD. ,  OSAKA UNIVERSITY

Inventor： Eisuke SUZUKI ,  Kazuto YAMAUCHI ,  Tatsutoshi SUZUKI ,  Daisuke SUZUKI

IPC: H01L21/67 ,  B01J35/02 ,  H01L21/02 ,  B01J23/42

CPC classification number: H01L21/67075 ,  B01J23/42 ,  B01J35/02 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/30612 ,  H01L29/1608 ,  H01L29/2003

Abstract: A planarization processing device for polishing a substrate, such as a semiconductor wafer, includes a drive motor that rotates the substrate about a rotational axis. A support plate holds a pad for polishing the substrate such that the surface of the pad faces the surface of the substrate. The surface of the pad contains a catalyst, e.g., composed of a transition metal compound. A liquid that supports a catalytic reaction for polishing the substrate is supplied between the surfaces of the substrate and the pad. A reciprocating drive device causes the support plate to undergo reciprocating motion in a direction parallel to the surface of the pad by at least an amount that makes possible planarization of the substrate based on the catalytic reaction.

公开(公告)号：US20190122904A1

公开(公告)日：2019-04-25

申请号：US16227270

申请日：2018-12-20

Applicant: TOHO ENGINEERING CO., LTD. ,  OSAKA UNIVERSITY

Inventor： Eisuke SUZUKI ,  Kazuto YAMAUCHI ,  Tatsutoshi SUZUKI ,  Daisuke SUZUKI

IPC: H01L21/67 ,  H01L21/302 ,  H01L29/16 ,  H01L21/306 ,  B01J23/42 ,  H01L21/02 ,  B01J35/02

CPC classification number: H01L21/67075 ,  B01J23/42 ,  B01J35/02 ,  H01L21/02019 ,  H01L21/02024 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/30612 ,  H01L29/1608 ,  H01L29/2003

Abstract: A method for planarizing a workpiece includes bringing a surface of the workpiece and a surface of a pad having a catalyst layer at least on the surface thereof into contact with or proximal to each other, rotating a first one of the workpiece and the pad in a plane of the surface of the first one around a central axis that intersects the surface of the first one while supplying a liquid that supports a catalytic reaction between the surface of the workpiece and the catalyst layer on the surface of the pad, and simultaneously reciprocally moving a second one of the workpiece and the pad in a direction parallel to the surface of the second one by at least an amount that makes possible planarization of the surface of the workpiece based on the catalytic reaction.

公开(公告)号：US20170069506A1

公开(公告)日：2017-03-09

申请号：US15125308

申请日：2015-03-11

Applicant: OSAKA UNIVERSITY ,  TOHO Engineering Co., Ltd.

Inventor： Kazuto YAMAUCHI ,  Ai ISOHASHI ,  Yasuhisa SANO

IPC: H01L21/306 ,  H01L21/04

CPC classification number: H01L21/30612 ,  H01L21/02019 ,  H01L21/0445 ,  H01L21/0475 ,  H01L21/302 ,  H01L21/30604 ,  H01L21/30625 ,  H01L21/32134 ,  H01L21/67086 ,  H01L29/1608

Abstract: There are provided a processing method for a wide-bandgap semiconductor substrate and an apparatus therefor that use no abrasives or no abrasive grains, or no solution having a large environmental burden at all, can process a single crystal, which is SiC, GaN, AlGaN, or AlN, at a variety of processing speed, can obtain a surface of higher quality than the quality of a surface finished by CMP, and also have an excellent compatibility with a clean room. A catalytic substance having a function of promoting the direct hydrolysis of a work piece (5) or promoting the hydrolysis of an oxide film on the surface of the work piece is used as a processing reference plane (3). In the presence of water (1), the work piece is brought into contact with or extremely close to the processing reference plane at a predetermined pressure.

Abstract translation: 提供了一种用于宽带隙半导体衬底的处理方法及其不使用研磨剂或不含磨粒的设备，或者根本没有使用具有大的环境负担的溶液可以处理单晶，SiC，GaN，AlGaN 或AlN以各种加工速度，可以获得比通过CMP完成的表面的质量更高质量的表面，并且还具有与洁净室良好的相容性。 使用具有促进工件（5）的直接水解或促进工件表面上的氧化膜的水解的功能的催化物质作为加工基准面（3）。 在水（1）的存在下，工件在预定压力下与处理参考平面接触或非常接近。

公开(公告)号：US20150068680A1

公开(公告)日：2015-03-12

申请号：US14539315

申请日：2014-11-12

Applicant: OSAKA UNIVERSITY ,  EBARA CORPORATION

Inventor： Yasuhisa SANO ,  Kazuto YAMAUCHI ,  Junji MURATA ,  Takeshi OKAMOTO ,  Shun SADAKUNI ,  Keita YAGI

IPC: H01L21/321

CPC classification number: H01L21/32125 ,  B24B37/0053 ,  B24B37/042 ,  B24B37/10 ,  B24B37/30 ,  B24B49/12 ,  H01L21/02024

Abstract: A polishing method and a polishing apparatus finish a surface of a substrate of a compound semiconductor containing an element such as Ga or the like to a desired level of flatness, so that the surface can be flattened with high surface accuracy within a practical processing time. In the presence of water, such as weak acid water, water with air dissolved therein, or electrolytic ion water, the surface of the substrate made of a compound semiconductor containing either one of Ga, Al, and In and a surface of a polishing pad having an electrically conductive member in an area of the surface which is held in contact with the substrate) are relatively moved while being held in contact with each other, thereby polishing the surface of the substrate.

Abstract translation: 抛光方法和抛光装置将包含诸如Ga等的元素的化合物半导体的基板的表面整理到所需的平坦度，使得在实际处理时间内可以以高的表面精度使表面变平。 在存在水的情况下，例如弱酸性水，溶于其中的空气的水或电解离子水，由包含Ga，Al和In中的任何一种的化合物半导体制成的基板的表面和抛光垫的表面 在保持与基板保持接触的表面的区域中具有导电构件）相对移动，同时保持彼此接触，从而抛光基板的表面。