公开(公告)号：US11574823B2

公开(公告)日：2023-02-07

申请号：US17471403

申请日：2021-09-10

Applicant: OSRAM OLED GmbH

Inventor： Hans Lindberg

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  C30B25/10 ,  C23C16/458 ,  H01L21/324 ,  H01L21/66 ,  H05B6/40

Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a method for producing semiconductor chips in a wafer composite includes providing a carrier having a wafer plane and a reference point, wherein the carrier is configured to accommodate at least one wafer composite in the wafer plane, providing a heating device comprising a heating plane and a first heating unit arranged laterally offset from the reference point in the heating plane, and arranging the heating device with its heating plane parallel to the wafer plane, arranging at least one wafer composite in the wafer plane of the carrier, rotating the carrier and the heating device relative to each other about an axis perpendicular to the heating plane and the wafer plane through the reference point, controlling the first heating unit such that a temperature of the carrier is influenced, providing a bending sensor for determining a bending characteristic value, the bending characteristic value being representative of a bending of the at least one wafer composite relative to the wafer plane and controlling the first heating unit based on the bending characteristic value.

公开(公告)号：US20210407827A1

公开(公告)日：2021-12-30

申请号：US17471403

申请日：2021-09-10

Applicant: OSRAM OLED GmbH

Inventor： Hans Lindberg

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  C30B25/10 ,  C23C16/458 ,  H01L21/324 ,  H01L21/66

Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a method for producing semiconductor chips in a wafer composite includes providing a carrier having a wafer plane and a reference point, wherein the carrier is configured to accommodate at least one wafer composite in the wafer plane, providing a heating device comprising a heating plane and a first heating unit arranged laterally offset from the reference point in the heating plane, and arranging the heating device with its heating plane parallel to the wafer plane, arranging at least one wafer composite in the wafer plane of the carrier, rotating the carrier and the heating device relative to each other about an axis perpendicular to the heating plane and the wafer plane through the reference point, controlling the first heating unit such that a temperature of the carrier is influenced, providing a bending sensor for determining a bending characteristic value, the bending characteristic value being representative of a bending of the at least one wafer composite relative to the wafer plane and controlling the first heating unit based on the bending characteristic value.

公开(公告)号：US11152231B2

公开(公告)日：2021-10-19

申请号：US16340364

申请日：2017-10-11

Applicant: OSRAM OLED GMBH

Inventor： Hans Lindberg

IPC: H01L21/67 ,  H01L21/687 ,  C23C16/46 ,  C30B25/10 ,  C23C16/458 ,  H01L21/324 ,  H01L21/66 ,  H05B6/40

Abstract: A heating apparatus, a method and a system for producing semiconductor chips in a wafer assembly are disclosed. In an embodiment a heating device includes a heating plane configured to be arranged parallel to a plane of the semiconductor chips in the wafer composite and a first heating unit extending substantially in a radial direction with respect to a reference point in the heating plane, wherein the first heating unit includes a plurality of inductive heating elements arranged adjacent to each other in a substantially radial direction, each inductive heating element having a predetermined distance from the reference point, and wherein the inductive heating elements are formed as electromagnets or permanent magnets configured to generate eddy currents in a carrier of the wafer composite.