Light emitting device and method for manufacturing a light emitting device

    公开(公告)号:US11239396B2

    公开(公告)日:2022-02-01

    申请号:US16635470

    申请日:2018-08-08

    Abstract: A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element.

    Light Emitting Device and Method for Manufacturing a Light Emitting Device

    公开(公告)号:US20200259052A1

    公开(公告)日:2020-08-13

    申请号:US16635470

    申请日:2018-08-08

    Abstract: A light-emitting device and a method for manufacturing a light-emitting device are disclosed. In an embodiment a light-emitting device includes a light-emitting semiconductor chip with a light-outcoupling surface surrounded laterally by a first reflective material in a form-locking manner, a foil element on the light-outcoupling surface, an optical element on the foil element laterally surrounded by a second reflective material in a form-locking manner and a gas-filled gap located at least in a partial region between the foil element and the optical element.

    Radiation-emitting component and method for producing a radiation-emitting component

    公开(公告)号:US12237444B2

    公开(公告)日:2025-02-25

    申请号:US18489511

    申请日:2023-10-18

    Abstract: A radiation-emitting component is specified with a carrier having a cavity, a radiation-emitting semiconductor chip which is arranged on a bottom surface delimiting the cavity and which is configured to generate primary electromagnetic radiation, and a first reflector layer arranged above a top surface of the semiconductor chip, wherein the carrier is transparent in places to the primary electromagnetic radiation, and the semiconductor chip is spaced apart from at least one side surface delimiting the cavity.

Patent Agency Ranking