公开(公告)号：US11508878B2

公开(公告)日：2022-11-22

申请号：US16628056

申请日：2018-07-02

Applicant: OSRAM OLED GmbH

Inventor： Christoph Klemp

IPC: H01L33/40 ,  H01L23/00 ,  H01L31/0203 ,  H01L33/00 ,  H01L33/48

Abstract: A method of producing a layer stack includes a) forming a first layer having a first material composition on a substrate, b) performing intermediate processing of the substrate with the first layer, c) forming an additional layer having a second material composition, the first material composition and the second material composition differing from each other by at most 10% by weight, at least locally directly on the first layer and d) applying a second layer at least in places directly onto the additional layer.

公开(公告)号：US11183612B2

公开(公告)日：2021-11-23

申请号：US16758172

申请日：2018-10-23

Applicant: OSRAM OLED GmbH

Inventor： Petrus Sundgren ,  Christoph Klemp

IPC: H01L33/00 ,  H01L21/78

Abstract: The invention relates to a method for producing at least one optoelectronic component (100) comprising the steps
A) providing an auxiliary carrier (1),
B) epitaxially applying a sacrificial layer (2) on the auxiliary carrier (1), wherein the sacrificial layer (2) comprises germanium,
C) epitaxially applying a semiconductor layer sequence (3) on the sacrificial layer (2),
D) removing the sacrificial layer (2) by means of dry etching (9), such that the auxiliary carrier (1) is removed from the semiconductor layer sequence (3).

公开(公告)号：US11949054B2

公开(公告)日：2024-04-02

申请号：US17268087

申请日：2019-08-09

Applicant: OSRAM OLED GMBH

Inventor： Wolfgang Schmid ,  Christoph Klemp ,  Isabel Otto

IPC: H01L33/62 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50 ,  H01L33/54

CPC classification number: H01L33/62 ,  H01L33/22 ,  H01L33/382 ,  H01L33/405 ,  H01L33/44 ,  H01L33/505 ,  H01L33/54 ,  H01L2933/0016 ,  H01L2933/005 ,  H01L2933/0066

Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.

公开(公告)号：US20210305476A1

公开(公告)日：2021-09-30

申请号：US17268087

申请日：2019-08-09

Applicant: OSRAM OLED GMBH

Inventor： Wolfgang Schmid ,  Christoph Klemp ,  Isabel Otto

IPC: H01L33/62 ,  H01L33/22 ,  H01L33/38 ,  H01L33/40 ,  H01L33/44 ,  H01L33/50 ,  H01L33/54

Abstract: An optoelectronic semiconductor component may include a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, a first contact element for making contact with the first semiconductor layer, and a second contact element for making contact with the second semiconductor layer. The first semiconductor layer may be arranged on a side facing away from a first main surface of the second semiconductor layer. Electromagnetic radiation may be output via the first main surface of the second semiconductor layer. The first contact element and the second contact element may each be arranged on a side of a first main surface of the first semiconductor layer. The first contact element may have a first section extending in a first direction, and a second section connected to the first section and extending in a second direction different from the first direction.

公开(公告)号：US20200176640A1

公开(公告)日：2020-06-04

申请号：US16628056

申请日：2018-07-02

Applicant: OSRAM OLED GmbH

Inventor： Christoph Klemp

IPC: H01L33/40 ,  H01L33/48 ,  H01L33/00 ,  H01L31/0203 ,  H01L23/00

Abstract: A method of producing a layer stack includes a) forming a first layer having a first material composition on a substrate, b) performing intermediate processing of the substrate with the first layer, c) forming an additional layer having a second material composition, the first material composition and the second material composition differing from each other by at most 10% by weight, at least locally directly on the first layer and d) applying a second layer at least in places directly onto the additional layer.