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    OPTOELECTRONIC EMITTING DEVICE AND METHOD FOR CONTROLLING AN OPTOELECTRONIC EMITTING DEVICE
    2.
    发明申请
    OPTOELECTRONIC EMITTING DEVICE AND METHOD FOR CONTROLLING AN OPTOELECTRONIC EMITTING DEVICE 有权

    公开(公告)号：US20210304674A1

    公开(公告)日：2021-09-30

    申请号：US17265062

    申请日：2019-07-30

    Applicant: OSRAM OLED GmbH

    Inventor： Armin WETTERER ,  Hubert HALBRITTER ,  Mikko PERAELAE

    IPC: G09G3/3233

    Abstract: An optoelectronic emitting device includes a plurality of optoelectronic semiconductor components with a respective drive circuit. Each of said driving circuits includes a first circuit branch having said respective optoelectronic semiconductor component and a first transistor for controlling the current flow through said optoelectronic semiconductor component, and a capacitor for driving said first transistor with said capacitor voltage. The first circuit branches of the drive circuits of a first group of the optoelectronic semiconductor components are connected between a supply potential and a common first reference potential line. The capacitors of the drive circuits of the first group of the optoelectronic semiconductor components are coupled to a common second reference potential line.

    METHOD FOR OPERATING A LASER DEVICE AND LASER DEVICE
    3.
    发明申请
    METHOD FOR OPERATING A LASER DEVICE AND LASER DEVICE 审中-公开

    公开(公告)号：US20200328577A1

    公开(公告)日：2020-10-15

    申请号：US16772709

    申请日：2018-11-29

    Applicant: OSRAM OLED GmbH

    Inventor： Roland Heinrich ENZMANN ,  Hubert HALBRITTER ,  Michael KLEIN

    IPC: H01S5/42 ,  H01S5/40

    Abstract: In at least one embodiment of the method of operating a laser device (100) having a plurality of laser diodes (1) which can be controlled independently of one another, wherein controlled laser diodes are each operated with an operating current (I), and wherein each laser diode can be operated for a proper operation in a nominal current range (ΔI), a step A) is carried out in which an input current (I_0) or an input voltage (U_0) is applied to the laser device. Furthermore, a step B) is carried out in which a characteristic value is determined that is representative of a number N of laser diodes that can be operated in the respective nominal current range with the input current applied in step A) or with the input voltage applied in step A). If the characteristic value is representative of N≥1, M laser diodes are controlled in a step C) in such a way that the M laser diodes are each operated in the nominal current range, wherein 1≤M≤N is selected.

    Light-Emitting Semiconductor Chip and Display Device
    4.
    发明申请
    Light-Emitting Semiconductor Chip and Display Device 审中-公开

    公开(公告)号：US20200273907A1

    公开(公告)日：2020-08-27

    申请号：US16633826

    申请日：2018-07-31

    Applicant: OSRAM OLED GMBH

    Inventor： Peter BRICK ,  Hubert HALBRITTER ,  Mikko PERÄLÄ ,  Frank SINGER

    IPC: H01L27/15 ,  H01L33/50 ,  H01L25/16

    Abstract: A light-emitting semiconductor chip and a display device are disclosed. In an embodiment a light-emitting semiconductor chip includes an emission surface formed with a plurality of first emission regions and second emission regions, wherein the first emission regions and the second emission regions are configured to emit light of a predeterminable color location, wherein the first and second emission regions are separately controllable from each other, wherein the first emission regions and second emission regions are arranged next to one another in a first plane, wherein all second emission regions form at least a part of an outer edge of the emission surface, and wherein the first emission regions have a smaller extent than the second emission regions along at least one direction lying in the first plane.

    DISPLAY DEVICE
    8.
    发明申请
    DISPLAY DEVICE 有权

    公开(公告)号：US20210265323A1

    公开(公告)日：2021-08-26

    申请号：US17253048

    申请日：2019-08-07

    Applicant: OSRAM OLED GmbH

    Inventor： Hubert HALBRITTER

    IPC: H01L25/075 ,  H01L25/04 ,  H01L25/16

    Abstract: A display device includes a plurality of pixels arranged in a regular main grid. Several optoelectronic additional chips are used to generate radiation. The pixels are formed by individually controllable light-emitting regions. The additional chips are arranged in a secondary grid. The secondary grid is offset from the main grid so that the additional chips are positioned away from the grid points of the main grid.

    RADIATION SOURCE FOR EMITTING TERAHERTZ RADIATION
    9.
    发明申请
    RADIATION SOURCE FOR EMITTING TERAHERTZ RADIATION 有权

    公开(公告)号：US20210215994A1

    公开(公告)日：2021-07-15

    申请号：US16769161

    申请日：2018-12-05

    Applicant: OSRAM OLED GmbH

    Inventor： Hubert HALBRITTER ,  Roland Heinrich ENZMANN

    IPC: G02F2/00 ,  H01S5/42 ,  H01S5/40 ,  H01S5/00

    Abstract: A radiation source for emitting terahertz radiation (6) is specified, comprising at least two laser light sources emitting laser radiation (11, 12) of different frequencies, and a photomixer (5) comprising a photoconductive semiconductor material (51) and an antenna structure (52), the photomixer (5) being configured to emit the laser radiation (11, 12) of the laser light sources (1, 2) and emitting terahertz radiation (6) with at least one beat frequency of the laser light sources, and wherein the at least two laser light sources are surface-emitting semiconductor lasers (1, 2) which are arranged in a one-dimensional or two-dimensional array on a common carrier (10).

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