公开(公告)号：US20210057884A1

公开(公告)日：2021-02-25

申请号：US16982425

申请日：2019-03-13

Applicant: OSRAM OLED GmbH

Inventor： Jan Marfeld ,  André Somers ,  Andreas Löffler ,  Sven Gerhard

IPC: H01S5/22 ,  H01S5/026 ,  H01S5/042 ,  H01S5/022 ,  H01S5/024 ,  H01S5/323

Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 μm. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.

公开(公告)号：US11973317B2

公开(公告)日：2024-04-30

申请号：US16982425

申请日：2019-03-13

Applicant: OSRAM OLED GmbH

Inventor： Jan Marfeld ,  André Somers ,  Andreas Löffler ,  Sven Gerhard

IPC: H01S5/0234 ,  H01S5/0237 ,  H01S5/02375 ,  H01S5/024 ,  H01S5/026 ,  H01S5/042 ,  H01S5/22 ,  H01S5/323

CPC classification number: H01S5/22 ,  H01S5/0234 ,  H01S5/0237 ,  H01S5/02375 ,  H01S5/02469 ,  H01S5/026 ,  H01S5/0422 ,  H01S5/32341

Abstract: In an embodiment, the semiconductor laser (1) comprises a semiconductor layer sequence (2) in which an active zone (22) for generating laser radiation (L) is located. Several electrical contact surfaces (5) serve for external electrical contacting of the semiconductor layer sequence (2). Several parallel ridge waveguides (3) are formed from the semiconductor layer sequence (2) and configured to guide the laser radiation (L) along a resonator axis, so that there is a separating trench (6) between adjacent ridge waveguides. At least one electrical feed (4) serves from at least one of the electrical contact surfaces (5) to guide the current to at least one of the ridge waveguides (3). A distance (A4) between the ridge waveguides is at most 50 μm. The ridge waveguides (3) are electrically controllable individually or in groups independently of one another and/or configured for single-mode operation.