公开(公告)号：US11411140B2

公开(公告)日：2022-08-09

申请号：US16635464

申请日：2018-07-04

Applicant: OSRAM OLED GMBH

Inventor： Wolfgang Schmid ,  Markus Bröll

IPC: H01L33/38 ,  H01L33/00 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  H01L33/20 ,  H01L33/44

Abstract: A method for producing a contact structure for an optoelectronic semiconductor component is given, comprising the steps: a) providing a growth substrate having a semiconductor body which is grown thereon and comprises a first and a second region, and an active region, b) creating at least one first recess which, starting from the second region, extends completely through the active region into the first region and does not completely penetrate the first region, c) inserting a first electrically conductive contact material into the first recess, d) fixing the semiconductor body with the side facing away from the growth substrate on a support substrate, and detaching the growth substrate from the semiconductor body, e) creating at least one second recess extending from the first region to the first recess so that the first recess and the second recess form a feedthrough through the semiconductor body, f) introducing a second electrically conductive contact material into the second recess in such a way that the first and second contact materials form an electrically conductive contact structure through the semiconductor body. Furthermore, an optoelectronic semiconductor component with a contact structure is specified.

公开(公告)号：US11342485B2

公开(公告)日：2022-05-24

申请号：US16963482

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Brendan Holland ,  Markus Bröll

IPC: H01L33/46 ,  H01L31/0216 ,  H01L31/0232

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.

公开(公告)号：US20210050484A1

公开(公告)日：2021-02-18

申请号：US16963482

申请日：2019-01-24

Applicant: OSRAM OLED GmbH

Inventor： Brendan Holland ,  Markus Bröll

IPC: H01L33/46 ,  H01L31/0216 ,  H01L31/0232

Abstract: An optoelectronic semiconductor component and a method for producing an optoelectronic semiconductor component are disclosed. In an embodiment an optoelectronic semiconductor component includes a semiconductor layer sequence having a first region of a first conductivity type, a reflection layer, a passivation layer arranged between the semiconductor layer sequence and the reflection layer, a first barrier layer arranged between the first region of the semiconductor layer sequence and the passivation layer and a second barrier layer arranged between the passivation layer and the reflection layer, wherein the first barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the semiconductor layer sequence, and wherein the second barrier layer is configured to reduce or prevent diffusion of contaminants from the passivation layer into the reflection layer.