公开(公告)号：US11935755B2

公开(公告)日：2024-03-19

申请号：US17126907

申请日：2020-12-18

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01L21/268 ,  H01L33/00 ,  H01S5/042

CPC classification number: H01L21/28575 ,  H01L21/268 ,  H01L33/005 ,  H01S5/04252 ,  H01S5/04254 ,  H01L21/28587 ,  H01L2933/0016 ,  H01S5/04256

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.

公开(公告)号：US20210111030A1

公开(公告)日：2021-04-15

申请号：US17126907

申请日：2020-12-18

Applicant: OSRAM OLED GmbH

Inventor： Alfred Lell ,  Georg Brüderl ,  John Brückner ,  Sven Gerhard ,  Muhammad Ali ,  Thomas Adlhoch

IPC: H01L21/285 ,  H01S5/042 ,  H01L33/00 ,  H01L21/268

Abstract: A semiconductor laser includes a substrate having a semiconductor layer sequence with an active layer that generates light during operation of the semiconductor laser, and a contact layer on a bottom side of the substrate opposite the semiconductor layer sequence, wherein the contact layer has at least one first partial region and at least one second partial region which are formed contiguously, the at least one first partial region is annealed, and the at least one second partial region is unannealed.