公开(公告)号：US09564566B2

公开(公告)日：2017-02-07

申请号：US14909850

申请日：2014-08-05

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Patrick Kromotis ,  Emanuel Hofmann ,  Ludwig Peyker ,  Torsten Baade ,  Simone Kiener ,  Kristin Grosse

IPC: H01L33/62 ,  H01L23/31 ,  H01L33/44 ,  H01L33/56 ,  H01L23/24

CPC classification number: H01L33/62 ,  H01L23/24 ,  H01L23/3135 ,  H01L33/44 ,  H01L33/56 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiO2 is arranged at a surface of the first layer, the second layer has a thickness of 10 nm to 1 μm, and a third layer is arranged above the second layer.

Abstract translation: 光电子部件包括具有导电的第一接触部分的壳体和布置在第一接触部分上的光电子半导体芯片，其中光电子半导体芯片和第一接触部分至少部分被第一层覆盖，第一层包括硅树脂， 第二层包括SiO 2布置在第一层的表面，第二层的厚度为10nm至1μm，第三层布置在第二层的上方。

公开(公告)号：US20140117396A1

公开(公告)日：2014-05-01

申请号：US14118475

申请日：2012-05-18

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Eisert ,  Torsten Baade ,  Michael Zitzlsperger

IPC: H01L33/50 ,  H01L33/60 ,  H01L33/52

CPC classification number: H01L33/502 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaves free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is designed to be absorbent and/or reflective and/or scattering for the primary radiation.

Abstract translation: 光电子半导体芯片包括发射初级光的半导体本体和通过至少部分初级光的波长转换而发射二次光的发光转换元件，其中发光转换元件具有固定到第一部分区域的第一部分区域 所述半导体本体的外表面，所述外表面发射初级光，并且释放所述外表面的第二部分区域，所述发光转换元件具有固定到所述第一层的背离半导体主体的表面的第二层， 与半导体本体间隔开，第一薄片至少部分地透射到主辐射，第二薄片的一部分至少覆盖第二部分区域，并且至少第二薄片的部分被设计成吸收和/ 或用于初级辐射的反射和/或散射。

公开(公告)号：US10074619B2

公开(公告)日：2018-09-11

申请号：US14401757

申请日：2013-05-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Torsten Baade ,  Jörg Erich Sorg

IPC: H01L23/60 ,  H02H3/20 ,  H02H1/00 ,  H01L23/58 ,  H01L27/02 ,  H01L33/62 ,  H01L33/40 ,  H01L33/52 ,  H01L33/48 ,  H05K1/02 ,  H01T1/12

CPC classification number: H01L23/60 ,  H01L23/58 ,  H01L27/0296 ,  H01L33/40 ,  H01L33/48 ,  H01L33/52 ,  H01L33/62 ,  H01L2224/48465 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01T1/12 ,  H02H1/00 ,  H02H1/0007 ,  H02H3/20 ,  H02H3/205 ,  H05K1/026 ,  H05K2201/10106

Abstract: An optoelectronic component device includes first and second electrodes; a first optoelectronic component electrically coupled to the first and second electrodes; and a first electrically conductive section electrically coupled to the first electrode, and a second electrically conductive section electrically coupled to the second electrode; wherein the first and second electrically conductive sections are arranged electrically in parallel with the first optoelectronic component; wherein the first and second electrically conductive sections are arranged and configured relative to one another such that, beyond a response voltage applied over the first and second conductive sections, a discharge path is formed between the first and second conductive sections; and wherein the response voltage has as its value a value formed greater than the threshold voltage value of the first optoelectronic component and less than or equal to the value of the breakdown voltage of the first optoelectronic component.

公开(公告)号：US20160343917A1

公开(公告)日：2016-11-24

申请号：US15227287

申请日：2016-08-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Eisert ,  Torsten Baade ,  Michael Zitzlsperger

IPC: H01L33/50 ,  H01L33/62 ,  H01L33/06 ,  H01L33/32 ,  H01L33/28 ,  H01L33/56 ,  H01L33/60

CPC classification number: H01L33/502 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

Abstract translation: 光电子半导体芯片包括发射初级光的半导体本体和通过至少部分初级光的波长转换而发射二次光的发光转换元件，其中发光转换元件具有固定到第一部分区域的第一部分区域 所述半导体主体的外表面，所述外表面发射初级光，并且释放所述外表面的第二部分区域，所述发光转换元件具有固定到所述第一层的背离半导体主体的表面的第二层， 与半导体本体间隔开，第一薄片至少部分地透射到主辐射，第二薄片的一部分至少覆盖第二部分区域，并且至少第二薄片的部分是吸收和/或反射的，并且 /或用于一次辐射的散射。

公开(公告)号：US20150255693A1

公开(公告)日：2015-09-10

申请号：US14401757

申请日：2013-05-23

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Torsten Baade ,  Jörg Erich Sorg

IPC: H01L33/62 ,  H01L33/40 ,  H01L33/52

CPC classification number: H01L23/60 ,  H01L23/58 ,  H01L27/0296 ,  H01L33/40 ,  H01L33/48 ,  H01L33/52 ,  H01L33/62 ,  H01L2224/48465 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0066 ,  H01T1/12 ,  H02H1/00 ,  H02H1/0007 ,  H02H3/20 ,  H02H3/205 ,  H05K1/026 ,  H05K2201/10106

Abstract: An optoelectronic component device includes first and second electrodes; a first optoelectronic component electrically coupled to the first and second electrodes; and a first electrically conductive section electrically coupled to the first electrode, and a second electrically conductive section electrically coupled to the second electrode; wherein the first and second electrically conductive sections are arranged electrically in parallel with the first optoelectronic component; wherein the first and second electrically conductive sections are arranged and configured relative to one another such that, beyond a response voltage applied over the first and second conductive sections, a discharge path is formed between the first and second conductive sections; and wherein the response voltage has as its value a value formed greater than the threshold voltage value of the first optoelectronic component and less than or equal to the value of the breakdown voltage of the first optoelectronic component.

Abstract translation: 光电子部件装置包括第一和第二电极; 电耦合到第一和第二电极的第一光电子部件; 和电耦合到第一电极的第一导电部分和电耦合到第二电极的第二导电部分; 其中所述第一和第二导电部分与所述第一光电子部件并联地电排列; 其中所述第一和第二导电部分相对于彼此布置和配置，使得超过施加在所述第一和第二导电部分上的响应电压，在所述第一和第二导电部分之间形成放电路径; 并且其中所述响应电压具有形成为大于所述第一光电子部件的阈值电压值且小于或等于所述第一光电子部件的击穿电压值的值。

公开(公告)号：US09882097B2

公开(公告)日：2018-01-30

申请号：US15227287

申请日：2016-08-03

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Dominik Eisert ,  Torsten Baade ,  Michael Zitzlsperger

IPC: H01L33/50 ,  H01L33/44 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L33/52 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/48

CPC classification number: H01L33/502 ,  H01L33/06 ,  H01L33/28 ,  H01L33/32 ,  H01L33/44 ,  H01L33/486 ,  H01L33/50 ,  H01L33/505 ,  H01L33/52 ,  H01L33/56 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/48247 ,  H01L2224/48471 ,  H01L2224/48479 ,  H01L2924/00014 ,  H01L2924/181 ,  H01L2933/0041 ,  H01L2933/0058 ,  H01L2933/0066 ,  H01L2933/0091 ,  H01L2224/48091 ,  H01L2924/00012 ,  H01L2224/4554

Abstract: An optoelectronic semiconductor chip includes a semiconductor body that emits primary light, and a luminescence conversion element that emits secondary light by wavelength conversion of at least part of the primary light, wherein the luminescence conversion element has a first lamina fixed to a first partial region of an outer surface of the semiconductor body, the outer surface emitting primary light, and leaving free a second partial region of the outer surface, the luminescence conversion element has a second lamina fixed to a surface of the first lamina facing away from the semiconductor body and spaced apart from the semiconductor body, the first lamina is at least partly transmissive to the primary radiation, a section of the second lamina covers at least the second partial region, and at least the section of the second lamina is absorbent and/or reflective and/or scattering for the primary radiation.

公开(公告)号：US09564560B2

公开(公告)日：2017-02-07

申请号：US14980027

申请日：2015-12-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Torsten Baade ,  Kristin Groβe

IPC: H01L33/50 ,  H01L33/56 ,  C09K11/08 ,  C09K11/77 ,  H01L33/26

CPC classification number: H01L33/502 ,  C09K11/0883 ,  C09K11/7731 ,  C09K11/7734 ,  H01L33/26 ,  H01L33/50 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: An optoelectronic component includes a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip, wherein a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and the phosphor is arranged in a lamina that bears directly on the semiconductor chip.

Abstract translation: 光电子部件包括在短波蓝色光谱范围内以小于约465nm的主波长发射初级辐射的半导体芯片; 以及荧光体，其将至少部分主辐射转换成在大约490nm至大约550nm之间的主波长的绿色光谱范围内的较长波次级辐射，并且至少部分地围绕半导体芯片，其中混合光 由初级辐射和二次辐射组成的波长为460nm至480nm左右的主波长，使得混合光的光通量比不具有相同荧光体的光电子部件中的光通量大至多130％ 主波长在460nm至480nm的范围内，并且磷光体布置在直接承载在半导体芯片上的层中。

公开(公告)号：US20160190410A1

公开(公告)日：2016-06-30

申请号：US14909850

申请日：2014-08-05

Applicant: OSRAM OPTO SEMICONDUCTORS GMBH

Inventor： Patrick Kromotis ,  Emanuel Hofmann ,  Ludwig Peyker ,  Torsten Baade ,  Simone Kiener ,  Kristin Grosse

IPC: H01L33/62 ,  H01L33/56

CPC classification number: H01L33/62 ,  H01L23/24 ,  H01L23/3135 ,  H01L33/44 ,  H01L33/56 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2224/8592 ,  H01L2924/181 ,  H01L2933/005 ,  H01L2933/0066 ,  H01L2924/00012 ,  H01L2924/00014 ,  H01L2924/00

Abstract: An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiO2 is arranged at a surface of the first layer, the second layer has a thickness of 10 nm to 1 μm, and a third layer is arranged above the second layer.

Abstract translation: 光电子部件包括具有导电的第一接触部分的壳体和布置在第一接触部分上的光电子半导体芯片，其中光电子半导体芯片和第一接触部分至少部分被第一层覆盖，第一层包括硅树脂， 第二层包括SiO 2布置在第一层的表面，第二层的厚度为10nm至1μm，第三层布置在第二层的上方。

公开(公告)号：US20160149092A1

公开(公告)日：2016-05-26

申请号：US14980027

申请日：2015-12-28

Applicant: OSRAM Opto Semiconductors GmbH

Inventor： Torsten Baade ,  Kristin Große

IPC: H01L33/50

CPC classification number: H01L33/502 ,  C09K11/0883 ,  C09K11/7731 ,  C09K11/7734 ,  H01L33/26 ,  H01L33/50 ,  H01L33/56 ,  H01L2224/48091 ,  H01L2224/73265 ,  H01L2924/00014

Abstract: An optoelectronic component includes a semiconductor chip that emits a primary radiation in the short-wave blue spectral range at a dominant wavelength of less than approximately 465 nm; and a phosphor that converts at least part of the primary radiation into a longer-wave secondary radiation in the green spectral range at a dominant wavelength of between approximately 490 nm and approximately 550 nm and at least partly surrounds the semiconductor chip, wherein a mixed light composed of primary radiation and secondary radiation has a dominant wavelength at wavelengths of approximately 460 nm to approximately 480 nm such that a luminous flux of the mixed light is up to 130% greater than a luminous flux in an optoelectronic component without a phosphor having the same dominant wavelength in a range of 460 nm to 480 nm, and the phosphor is arranged in a lamina that bears directly on the semiconductor chip.

Abstract translation: 光电子部件包括在短波蓝色光谱范围内以小于约465nm的主波长发射初级辐射的半导体芯片; 以及荧光体，其将至少部分主辐射转换成在大约490nm至大约550nm之间的主波长的绿色光谱范围内的较长波次级辐射，并且至少部分地围绕半导体芯片，其中混合光 由初级辐射和二次辐射组成的波长为460nm至480nm左右的主波长，使得混合光的光通量比不具有相同荧光体的光电子部件中的光通量大至多130％ 主波长在460nm至480nm的范围内，并且磷光体布置在直接承载在半导体芯片上的层中。