公开(公告)号：US20230253429A1

公开(公告)日：2023-08-10

申请号：US18131267

申请日：2023-04-05

Applicant: OmniVision Technologies, Inc.

Inventor： Cynthia Sun Yee LEE ,  Shiyu SUN

IPC: H01L27/146

CPC classification number: H01L27/1463 ,  H01L27/14645 ,  H01L27/14685 ,  H01L27/1462

Abstract: An image sensor with passivated full deep-trench isolation includes a semiconductor substrate, the substrate including a plurality of sidewalls that form a plurality of trenches that separates pixels of a pixel array, each of the plurality of trenches extending from a first surface of the semiconductor substrate to a second surface opposite the first surface, and a passivation layer disposed on the second surface, the passivation layer lining the plurality of sidewall surfaces and the back surface of the semiconductor substrate. Each of the plurality of trenches extending from the first surface into the semiconductor substrate forming a first opening proximate to the first surface and a second opening proximate to the second surface, wherein the first opening has a width greater than that of the second opening.

公开(公告)号：US20240145497A1

公开(公告)日：2024-05-02

申请号：US17977837

申请日：2022-10-31

Applicant: OmniVision Technologies, Inc.

Inventor： Hui ZANG ,  Vincent VENEZIA ,  Cynthia Sun Yee LEE

IPC: H01L27/146

CPC classification number: H01L27/14609 ,  H01L27/14623 ,  H01L27/1463 ,  H01L27/14643

Abstract: A global-shutter pixel includes a semiconductor substrate that has a storage node and a photodiode region. A front surface of the substrate has a first recessed region between the photodiode region and the storage node in a first direction parallel to the front surface, and a second recessed region between the first recessed region and the storage node in the first direction. The first and second recessed regions extend into the substrate to a respective first recess-depth and a second recess-depth that exceeds the first recess-depth. The photodiode region includes (i) a first doped-section spanning a depth-range and having a first dopant concentration, and (ii) a second doped-section between the front surface and the first doped-section and having a second dopant concentration that is less than the first dopant concentration. The first doped-section includes a protrusion that extends at least partially beneath the first recessed region in the first direction.

公开(公告)号：US20220199658A1

公开(公告)日：2022-06-23

申请号：US17133553

申请日：2020-12-23

Applicant: OmniVision Technologies, Inc.

Inventor： Cynthia Sun Yee LEE ,  Shiyu SUN

IPC: H01L27/146

Abstract: An image sensor with passivated full deep-trench isolation includes a semiconductor substrate, the substrate including a plurality of sidewalls that form a plurality of trenches that separates pixels of a pixel array, and a passivation layer lining the plurality of sidewall surfaces and the back surface of the semiconductor substrate. A method for forming an image sensor with passivated full deep-trench isolation includes forming trenches in a semiconductor substrate, filling the trenches with a sacrificial material, forming a plurality of photodiode regions, forming a circuit layer, thinning the semiconductor substrate, and removing the sacrificial material. A method for reducing noise in an image sensor includes removing material from a semiconductor substrate to form a plurality of trenches that extend from a front surface toward a back surface, and depositing a dielectric material onto the back surface and into the plurality of trenches through a back opening of each trench.